Edge illuminated photodiodes
This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.
1. A photodiode comprising:
a substrate with at least a plurality of sides, wherein said plurality of sides comprise:
a first side substantially comprising a region doped with an impurity of a first conductivity type;
a second side parallel to the first side;
a top side having an anode metallization region and having a region proximate to said anode metallization region doped with an impurity of a second conductivity type; and
a bottom side having a cathode metallization layer.
2. The photodiode of claim 1 wherein the first conductivity type is p-type.
3. The photodiode of claim 1 wherein the first conductivity type is n-type.
4. The photodiode of claim 3 wherein the n-type conductivity is achieved using a n-type dopant.
5. The photodiode of claim 4 wherein the n-type dopant is at least one of phosphorus, arsenic, or antimony.
6. The photodiode of claim 4 wherein the n-type dopant creates a n+ doping layer and wherein said n+ doping layer I approximately 0.5 μm to 1 μm deep.
7. The photodiode of claim 1 wherein the impurity of a second conductivity type is a p-type dopant.
8. The photodiode of claim 7 wherein the p-type dopant is at least one of boron or InP/InGaAs.
9. The photodiode of claim 1 wherein the cathode metallization layer of the bottom side comprises gold.
10. A photodiode comprising:
a substrate with at least a plurality of sides, wherein said plurality sides comprise:
a first side;
a second side, having an inner face and an outer face, parallel to the first side;
a top side having an anode metallization region and a textured region doped with an impurity of a selected conductivity type;
a bottom side, having an inner face and an outer face, parallel to the top side and further comprising a cathode metallization layer; and
an angled side having an inner face and an outer face, wherein the inner face of said angled side forms an angle with the inner face of said second side of greater than 90 degrees.
11. The photodiode of claim 10 wherein said photodiode has a detection range and wherein said detection range varies from 800 nm to 1700 nm.
12. The photodiode of claim 10 wherein said photodiode has an active area diameter approximately 85 μm.
13. The photodiode of claim 10 wherein said photodiode has an operating voltage of approximately −5 V.
14. The photodiode of claim 10 wherein said photodiode has a minimum responsivity of approximately 0.70 A/W.
15. The photodiode of claim 10 wherein said photodiode has a dark current of less than 1 nA.
16. The photodiode of claim 10 wherein said photodiode has a minimum reverse breakdown voltage of 20 V.
17. A photodiode comprising:
a substrate with at least a plurality of sides, wherein said plurality sides comprise:
a first side;
a second side, having an inner face and an outer face, parallel to the first side;
a top side having a metallization region, a region doped with an impurity of a first conductivity type, and at least two regions doped with an impurity of a second conductivity type wherein said second conductivity type is different from said first conductivity type;
a bottom side, having an inner face and an outer face, parallel to the top side and further comprising a metallization layer; and
an angled side having an inner face and an outer face, wherein the inner face of said angled side forms an angle with the inner face of said distant side of greater than 90 degrees.
18. A photodiode comprising:
a substrate with at least a plurality of sides, wherein said plurality of sides comprise:
a first side substantially comprising a region doped with an impurity of a first conductivity type;
a second side parallel to the first side;
a top side having an anode metallization region and having a region proximate to said anode metallization region doped with an impurity of a second conductivity type; and
a bottom side having a cathode metallization layer, wherein at least one face of the first, second, top or bottom side is subjected to surface texturization.