Method of manufacturing sensor with photodiode and charge transfer transistor

1. A method of manufacturing a photodiode sensor and an associated charge transfer transistor, the method comprising:

forming an insulation region on a substrate, the insulation region being a thick oxide region obtained by a LOCOS method;

forming the diode on a first side of the insulation region, the diode being self-aligned on the insulation region and generating electron-hole pairs when an upper surface thereof is struck by photons;

replacing the insulation region by a gate of the charge transfer transistor; and

forming a drain of the transistor, self-aligned on a second side of the insulation region or the gate,

wherein the drain forming step is performed after the insulation region replacing step or after the diode forming step.

2. The method according to claim 1 , wherein the insulation region forming step comprises:

depositing an oxide layer;

depositing a first mask having a first window; and

oxidizing a part of the silicon substrate situated beneath the oxide layer and localized in the first window to form the insulation region.

3. The method according to claim 2 , wherein the insulation region forming step further comprises:

implanting a first implantation of dopant impurities of a first type in the first window to form a first doped region beneath the insulation region.

4. The method according to claim 2 , wherein the diode-forming step further comprises:

implanting a second implantation of dopant impurities of the first type to form a second doped region extending from the first side of the insulation region; and

implanting a third implantation of dopant impurities of the second type to form a third dopant region extending from the first side of the insulation region and extending beneath the second doped region.

5. The method according to claim 4 , wherein the diode forming step further comprises the following step, performed after the second implantation and the third implantation steps:

depositing a second mask covering the substrate on a second side of the insulation region, opposite the first side, and partially covering the insulation region.

6. The method according to claim 5 , wherein the insulation region replacing step comprises:

removing the insulation region by de-oxidation; and

depositing and etching a gate dielectric and a layer of gate material in the region previously covered by the insulation region.

7. The method of according to claim 1 , wherein an upper portion of the diode has an opposite polarity type to a drain of the charge transfer transistor.

8. The method according to claim 7 , wherein the insulation region forming step comprises:

depositing an oxide layer;

depositing a first mask having a first window; and

oxidizing a part of the silicon substrate situated beneath the oxide layer and localized in the first window to form the insulation region.

9. The method according to claim 8 , wherein the insulation region forming step further comprises:

implanting a first implantation of dopant impurities of a first type in the first window to form a first doped region beneath the insulation region.

10. The method according to claim 7 , wherein the diode-forming step further comprises:

implanting a second implantation of dopant impurities of the first type to form a second doped region extending from the first side of the insulation region; and

implanting a third implantation of dopant impurities of the second type to form a third dopant region extending from the first side of the insulation region and extending beneath the second doped region.

11. The method according to claim 10 , wherein the diode forming step further comprises the following step, performed after the second implantation and the third implantation steps:

depositing a second mask covering the substrate on a second side of the insulation region, opposite the first side, and partially covering the insulation region.

12. The method according to claim 7 , wherein the insulation region replacing step comprises:

removing the insulation region by de-oxidation; and

depositing and etching a gate dielectric and a layer of gate material in the region previously covered by the insulation region.

13. The method according to claim 1 , wherein the insulation region forming step further comprises:

implanting a first implantation of dopant impurities of a first type in the window to form a first doped region beneath the insulation region.

14. The method according to claim 1 , wherein the diode-forming step further comprises:

implanting a second implantation of dopant impurities of the first type to form a second doped region extending from the first side of the insulation region; and

implanting a third implantation of dopant impurities of the second type to form a third dopant region extending from the first side of the insulation region and extending beneath the second doped region.

15. The method according to claim 14 , wherein the diode forming step further comprises the following step, performed after the second implantation and the third implantation steps:

depositing a second mask covering the substrate on a second side of the insulation region, opposite the first side, and partially covering the insulation region.

16. An image sensor comprising a photodiode sensor and charge transfer transistor made according to claim 15 .

17. The method according to claim 1 , wherein the insulation region replacing step comprises:

removing the insulation region by de-oxidation; and

depositing and etching a gate dielectric and a layer of gate material in the region previously covered by the insulation region.

18. An image sensor comprising a photodiode sensor and charge transfer transistor made according to claim 1 .