Thermoelectric material and thermoelectric device
View Patent ↗A thermoelectric material includes a composition represented by the following formula (A): (Ti a1 Zr b1 Hf c1 ) x Ni y Sn 100-x-y (A) where 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30≦x≦35, and 30≦y≦35. The composition includes at least two MgAgAs crystal phases different in a lattice constant, and, assuming that X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be I 1 and I 2 , respectively, a value of I 1 /(I 1 +I 2 ) is in a range of 0.2 to 0.8.
1. A thermoelectric material comprising a composition represented by the following formula (A):
(Ti a1 Zr b1 Hf c1 )Ni y Sn 100-x-y (A)
wherein 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30≦x≦35, and 30≦y=35,
wherein the composition has at least two MgAgAs crystal phases different in a lattice constant, and,
assuming that X-ray diffraction peak intensity from (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be I 1 and I 2 , respectively, a value of I 1 /(I 1 +I 2 ) being in a range of 0.2 to 0.8.
2. The thermoelectric material according to claim 1 , wherein the value of I 1 /(I 1 +I 2 ) is in a range of 0.3 to 0.6.
3. The thermoelectric material according to claim 1 , wherein a part of Ti, Zr and Hf in the formula (A) is substituted by at least one element selected from the group consisting of V, Nb, Ta, Cr, Mo and W.
4. The thermoelectric material according to claim 1 , wherein a part of Ni in the formula (A) is substituted by at least one element selected from the group consisting of Mn, Fe, Co and Cu.
5. The thermoelectric material according to claim 1 , wherein a part of Sn in the formula (A) is substituted by at least one element selected from the group consisting of Si, Mg, As, Sb, Bi, Ge, Pb, Ga and In.
6. The thermoelectric material according to claim 1 , wherein the composition has been subjected to heat treatment under a temperature range of 1000° C. or more and less than 1200° C.
7. The thermoelectric material according to claim 6 , wherein the composition has been subjected to heat treatment under a temperature range of 1100° C. or more and less than 1180° C.
8. The thermoelectric material according to claim 6 , wherein the composition has been subjected to heat treatment in hot pressing.
9. A thermoelectric material comprising a composition represented by the following formula (B):
(Ln d (Ti a2 Zr b2 Hf c2 ) 1-d ) x Ni y Sn 100-x-y (B)
where Ln is at least one element selected from the group consisting of Y and rare earth elements, and 0<a2<1, 0<b2<1, 0<c2<1, a2+b2+c2=1, 30≦x≦35, and 30≦y≦35,
wherein the composition has at least two MgAgAs crystal phases different in a lattice constant, and,
assuming that X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be I 1 and I 2 , respectively, a value of I 1 /(I 1 +I 2 ) being in a range of 0.2 to 0.8.
10. The thermoelectric material according to claim 9 , wherein the value of I 1 /(I 1 +I 2 ) is in a range of 0.3 to 0.6.
11. The thermoelectric material according to claim 9 , wherein a part of Ti, Zr and Hf in the formula (B) is substituted by at least one element selected from the group consisting of V, Nb, Ta, Cr, Mo and W.
12. The thermoelectric material according to claim 9 , wherein a part of Ni in the formula (B) is substituted by at least one element selected from the group consisting of Mn, Fe, Co and Cu.
13. The thermoelectric material according to claim 9 , wherein a part of Sn in the formula (B) is substituted by at least one element selected from the group consisting of Si, Mg, As, Sb, Bi, Ge, Pb, Ga and In.
14. The thermoelectric material according to claim 9 , wherein the composition has been subjected to heat treatment under a temperature range of 1000° C. or more and less than 1200° C.
15. The thermoelectric material according to claim 14 , wherein the composition has been subjected to heat treatment under a temperature range of 1100° C. or more and less than 1180° C.
16. The thermoelectric material according to claim 14 , wherein the composition has been subjected to heat treatment in hot pressing.
17. A thermoelectric device comprising p-type thermoelectric chips and n-type thermoelectric chips connected alternately in series, and at least the p-type thermoelectric chips or the n-type thermoelectric chips comprising the thermoelectric material according to claim 1 .
18. A thermoelectric device comprising p-type thermoelectric chips and n-type thermoelectric chips connected alternately in series, and at least the p-type thermoelectric chips or the n-type thermoelectric chips comprising the thermoelectric material according to claim 9 .
19. A thermoelectric material comprising a composition represented by the following formula (A):
(Ti a1 Zr b1 Hf c1 )Ni y Sn 100-x-y (A)
wherein 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30≦x≦35, and 30≦y≦35,
wherein the composition has at least two MgAgAs crystal phases different in a lattice constant, and
wherein assuming that an X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and an X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant are I 1 and I 2 , respectively, then the thermoelectric material has a value of I 1 /(I 1 +I 2 ) in a range of 0.2 to 0.8 and a ZT value of higher than 1.3, wherein Z=α 2 /(ρκ) where α is a Seebeck coefficient of thermoelectric material, ρ is an electrical resistivity of the thermoelectric material, κ is a thermal conductivity of the thermoelectric material, and T is an absolute temperature.
20. A thermoelectric material comprising a composition represented by the following formula (B):
(Ln d (Ti a2 Zr b2 Hf c2 ) 1-d ) x Ni y Sn 100-x-y (B)
wherein Ln is at least one element selected from the group consisting of Y and rare earth elements, and 0<a2<1, 0<b2<1, 0<c2<1, a2+b2+c2=1, 30≦x≦35, and 30≦y≦35,
wherein the composition has at least two MgAgAs crystal phases different in a lattice constant, and
wherein assuming that an X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and an X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant are I 1 and I 2 , respectively, then the thermoelectric material has a value of I 1 /(I 1 +I 2 ) in a range of 0.2 to 0.8 and a ZT value of higher than 1.3, wherein Z=a 2 /(ρκ) where α is a Seebeck coefficient of thermoelectric material, ρ is an electrical resistivity of the thermoelectric material, κ is a thermal conductivity of the thermoelectric material, and T is an absolute temperature.