Nanostructures and methods for manufacturing the same
View Patent ↗A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.
1. A layered structure comprising:
a single crystal, epitaxial layer of a second crystalline material grown on a surface of a substrate of a first crystalline material, the second crystalline material being different from the first crystalline material;
wherein:
a plurality of nanowhiskers of the second crystalline material extend from the surface of the substrate in the epitaxial layer of the second crystalline material;
the plurality of nanowhiskers constitute nucleation sites for the epitaxial layer of the second crystalline material;
the entire epitaxial layer of the second crystalline material contains substantially no misfit dislocations, grain boundaries or antiphase domains;
the plurality of nanowhiskers and the epitaxial layer of the second crystalline material comprise a same III-V semiconductor material;
the surface of the substrate of the first crystalline material comprises silicon;
the substrate comprises a crystalline silicon (100) substrate; and
the surface of the substrate comprises a (111) silicon surface exposed in V-shaped grooves in the substrate.
2. A structure according to claim 1 , wherein the plurality of nanowhiskers extend in a <111> direction from the (111) silicon surface in the V-shaped grooves.
3. A layered structure comprising:
a single crystal, epitaxial layer of a second crystalline material grown on a surface of a substrate of a first crystalline material, the second crystalline material being different from the first crystalline material;
wherein:
a plurality of nanowhiskers of the second crystalline material extend from the surface of the substrate in the epitaxial layer of the second crystalline material;
the plurality of nanowhiskers constitute nucleation sites for the epitaxial layer of the second crystalline material;
the entire epitaxial layer of the second crystalline material contains substantially no misfit dislocations, grain boundaries or antiphase domains;
the plurality of nanowhiskers and the epitaxial layer of the second crystalline material comprise a same III-V semiconductor material;
the substrate of the first crystalline material comprises a crystalline silicon substrate;
the substrate comprises a crystalline silicon (100) substrate; and
the surface of the substrate comprises a (111) silicon surface exposed in V-shaped grooves in the substrate.
4. A structure according to claim 3 , wherein the plurality of nanowhiskers extend in a <111> direction from the (111) silicon surface in the V-shaped grooves.
5. A structure comprising a plurality of crystalline III-V semiconductor nanowhiskers grown on a surface of a silicon substrate, wherein each entire nanowhisker of the plurality of nanowhiskers contains no misfit dislocations or antiphase domains,
wherein:
the substrate comprises a crystalline silicon (100) substrate; and
the surface of the substrate comprises a (111) silicon surface exposed in V-shaped grooves in the substrate.
6. A structure according to claim 5 , wherein the plurality of nanowhiskers extend in a <111> direction from the (111) silicon surface in the V-shaped grooves.
7. A structure according to claim 6 , wherein the plurality of nanowhiskers extend primarily in a <111> B direction from the (111) silicon surface in the V-shaped grooves.
8. A structure according to claim 5 , wherein the plurality of nanowhiskers which extend from the (111) silicon surface in the V-shaped grooves extend primarily from two opposing surfaces of the V-shaped grooves.
9. A structure according to claim 2 , wherein the plurality of nanowhiskers extend primarily in a <111> B direction from the (111) silicon surface in the V-shaped grooves.
10. A structure according to claim 1 , wherein the plurality of nanowhiskers which extend from the (111) silicon surface in the V-shaped grooves extend primarily from two opposing surfaces of the V-shaped grooves.