IP Library Granted Patent US 7,804,076
Granted Patent B2
US 7,804,076 · App. 11/382,600 · Granted Sep 28, 2010

Insulator for high current ion implanters

Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
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Quick Facts
Patent No.
US 7,804,076
App. No.
11/382,600
Granted
Sep 28, 2010
Kind
B2
Abstract

An insulator usable in high current ion implantation systems includes increased surface due to the configuration of an inner cylinder and an outer cylinder coupled to the inner cylinder at one end. A cylindrical cavity extends between the two cylinders increasing the surface area and making the insulator resistant to being coated by a coating that could produce a leakage path.

Claims (27)

1. In an ion implantation system having an ion source maintained at a high electric potential, a grounded end station adapted for holding substrates and a plurality of extraction electrodes accelerating the ions from a source head and directing an ion beam onto the substrates of the end station, the improvement comprising:

an insulator disposed between a first component being a high voltage component and a second component being a lower voltage component or a component maintained at ground,

the insulator comprising an inner cylindrical body surrounded by an outer cylindrical body with a gap therebetween, said inner cylindrical body oriented such that its axis extends from said first component to said second component, and

the outer cylindrical body having opposed ends, one of the ends radially coupled to the inner cylindrical body,

wherein the inner cylindrical body is longer than the outer cylindrical body and includes opposed end faces, each in confronting relation with and contacting and terminating at an exterior of a respective one of said first and second components and wherein each of said first and second components comprise electrodes, and

wherein the insulator comprising the inner cylindrical body and the outer cylindrical body is a single uninterrupted and inseparable unit and the inner cylindrical body includes an axially central portion being completely diametrically solid.

2. In the ion implantation system of claim 1 , wherein a length of the outer cylindrical body is at least 60% of a length of the inner cylindrical body.

3. In the ion implantation system of claim 1 , wherein the inner cylindrical body and the outer cylindrical body are concentric.

4. In the ion implantation system of claim 1 , wherein the gap comprises a cylindrical cavity.

5. In the ion implantation system of claim 1 , wherein a radial thickness of the inner cylindrical body is greater than a radial thickness of the outer cylindrical body.

6. In the ion implantation system of claim 1 , wherein the potential difference between the first and second components is at least about 20 kV.

7. In the ion implantation system of claim 1 , wherein the inner cylindrical body is circumferentially coupled to the outer cylindrical body such that the gap has an open end and a closed end and the insulator is disposed within the source head and the closed end is disposed closer to the ion beam than the open end.

8. In the ion implantation system of claim 7 , wherein the insulator is disposed within the source head and a first end of the opposed ends contacts the first component and the first end is closest to the closed end of the outer cylindrical body.

9. In the ion implantation system of claim 1 , wherein the axis of the insulator is disposed orthogonal to a direction of the ion beam.

10. In the ion implantation system of claim 1 , wherein the outer cylindrical body is spaced a constant distance from the inner cylindrical body.

11. In the ion implantation system of claim 1 , wherein the other of the opposed ends of the outer cylindrical body is spaced from the inner cylindrical body by the gap.

12. In an apparatus having a chamber with a first component maintained at a high electric potential and proximate to a second component maintained at a lower electric potential and an ionic gas present therein, the improvement comprising:

an insulator disposed between the first and second components,

the insulator comprising an inner cylindrical body concentrically surrounded by an outer cylindrical body with a gap therebetween, the inner cylindrical body including an axially central portion being completely diametrically solid and positioned such that its cylindrical axis extends from the first component, to the second component and having opposed end faces in confronting relation with and physically contacting and terminating at an exterior of each of the first and second components, respectively, each said opposed end face including a radial surface,

the outer cylindrical body having opposed ends, only one of the ends radially coupled to the inner cylindrical body by a flange extending circumferentially around the inner cylindrical body.

13. In the apparatus of claim 12 , wherein the outer cylindrical body includes a length at least about 60% of a length of the inner cylindrical body.

14. An insulator for insulating a first component maintained at a high electric potential from a second component desirably maintained at ground in an ionic gaseous environment, the insulator comprising an inner cylindrical body interposed between the first and second components and oriented such that its cylindrical axis extends from the first component to the second component, the inner cylindrical body concentrically surrounded by an outer cylindrical body with a gap therebetween and the outer cylindrical body having opposed ends, one of the ends radially coupled to the inner cylindrical body by a flange extending circumferentially around the inner cylindrical body,

wherein the inner cylindrical body includes an axially central portion being completely diametrically solid and opposed end faces that include a radial surface facing, contacting and terminating at an exterior of a respective one of the first and second components.

15. The insulator as in claim 14 , wherein a length of the outer cylindrical body is at least 60% of a length of the inner cylindrical body.

16. In the apparatus of claim 12 , wherein the insulator is a single uninterrupted and inseparable unit.

17. In the apparatus of claim 12 , wherein each of the first and second components comprise electrodes.

18. The insulator as in claim 14 , wherein the insulator is a single uninterrupted and inseparable unit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 10, 2006
From: HUANG, JAMES; KUO, YUNG-CHIN; HSU, MIN-KUNG
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 017599/0994 →
Continuity (1)
Related Publication 20070262270A1 · Nov 15, 2007