IP Library Granted Patent US 7,814,565
Granted Patent B2
US 7,814,565 · App. 12/199,733 · Granted Oct 12, 2010

Nanostructure on a probe tip

Assignee: SNU R&DB Foundation
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Quick Facts
Patent No.
US 7,814,565
App. No.
12/199,733
Filed
Aug 27, 2008
Granted
Oct 12, 2010
Kind
B2
Art Unit
2881
USPC
850/42
Abstract

Techniques for forming a nanostructure on a probe tip are provided.

Claims (38)

1. A method for forming a nanostructure on a probe tip, comprising:

providing a substrate on which a plurality of nanostructures are formed;

contacting a probe tip with at least one of the nanostructures, the probe tip having a surface layer, wherein the probe is metal;

melting at least a portion of the surface layer to attach the at least one nanostructure to the probe tip; and

releasing the at least one nanostructure from the substrate.

2. The method of claim 1 , wherein the providing of the substrate on which the plurality of nanostructures are formed comprises:

forming catalyst particles on the substrate; and

forming the nanostructures from the catalyst particles.

3. The method of claim 2 , wherein the forming of the nanostructures from the catalyst particles comprises forming the nanostructures in a substantially vertical direction with respect to the substrate by chemical vapor deposition (CVD) or evaporation techniques in the presence of an electric field.

4. The method of claim 1 , wherein the plurality of nanostructures comprise carbon nanotubes or conductive nanowires.

5. The method of claim 1 , wherein the probe tip comprises at least one metal selected from the group consisting of tungsten, nickel, aluminum, molybdenum, tantalum and niobium.

6. The method of claim 1 , wherein the surface layer comprises a metal having a melting point lower than a melting point of the probe tip.

7. The method of claim 6 , wherein the surface layer comprises tin or zinc.

8. The method of claim 1 , further comprising forming the surface layer on the probe tip by sputtering or evaporation.

9. The method of claim 1 , wherein contacting of the probe tip with at least one of the nanostructures comprises:

moving the probe tip adjacent the substrate; and

determining whether the probe tip contacts the at least one of the nanostructures by applying a voltage between the probe tip and the plurality of nanostructures and by monitoring a current generated by contact between the probe tip and the at least one of the nanostructures.

10. The method of claim 1 , wherein melting at least a portion of the surface layer to attach the at least one nanostructure to the probe tip comprises:

applying a voltage between the probe tip and the at least one nanostructure to generate resistance heat between the surface layer and the at least one nanostructure; and

allowing the resistance heat to melt the at least a portion of the surface layer.

11. The method of claim 10 , wherein the resistance heat is generated at a contact portion of the surface layer and the at least one nanostructure.

12. The method of claim 10 , further comprising varying the voltage to adjust a bonding strength between the probe tip and the at least one nanostructure.

13. The method of claim 1 , wherein releasing the at least one nanostructure from the substrate comprises applying a physical force to the at least one nanostructure.

14. The method of claim 1 , wherein releasing the at least one nanostructure from the substrate comprises applying a voltage and/or current pulse to the at least one nano structure.

15. An apparatus comprising:

a probe tip, wherein the probe tip is metal;

a surface layer disposed on the probe tip; and

a nanostructure disposed on the probe tip,

wherein the nanostructure has been disposed on the probe tip by melting at least a portion of the surface layer adjacent the nanostructure.

16. The apparatus of claim 15 , wherein the probe tip comprises at least one metal selected from the group consisting of tungsten, nickel, aluminum, molybdenum, tantalum and niobium.

17. The apparatus of claim 15 , wherein the surface layer comprises a metal having a melting point lower than a melting point of the probe tip.

18. The apparatus of claim 17 , wherein the surface layer comprises tin or zinc.

19. The apparatus of claim 15 , wherein the nanostructure comprises a carbon nanotube or a conductive nanowire.

20. A method for forming a nanostructure on a probe tip, comprising:

providing a substrate on which a plurality of nanostructures are formed;

contacting a probe tip with at least one of the nanostructures, the probe tip having a surface layer;

melting at least a portion of the surface layer to attach the at least one nanostructure to the probe tip, wherein melting at least a portion of the surface layer to attach the at least one nanostructure to the probe tip comprises applying a voltage between the probe tip and the at least one nanostructure until a pre-determined current is obtained; and

releasing the at least one nanostructure from the substrate.

Assignments (5)
RELEASE OF SECURITY INTEREST IN PATENTS, RECORDED ON JULY 31, 2019 AT REEL 049924 FRAME 0794 Recorded Jun 22, 2026
From: CRESTLINE DIRECT FINANCE, L.P., AS COLLATERAL AGENT
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 075798/0763 →
RELEASE OF SECURITY INTEREST IN PATENTS, RECORDED ON JANUARY 29, 2019 AT REEL 048373 FRAME 0217 Recorded Sep 22, 2025
From: CRESTLINE DIRECT FINANCE, L.P., AS COLLATERAL AGENT
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 072936/0464 →
RELEASE OF SECURITY INTEREST Recorded Jul 31, 2019
From: CRESTLINE DIRECT FINANCE, L.P.
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 049924/0794 →
SECURITY INTEREST Recorded Jan 29, 2019
From: EMPIRE TECHNOLOGY DEVELOPMENT LLC
To: CRESTLINE DIRECT FINANCE, L.P.
Reel/Frame 048373/0217 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2009
From: KIM, YONG HYUP; KANG, TAE JUNE
To: SNU R&DB FOUNDATION
Reel/Frame 022245/0926 →
Continuity (1)
Related Publication 20100058500A1 · Mar 4, 2010