Alignment features for proximity communication
Embodiments of a semiconductor die that includes proximity connectors proximate to a first surface of the semiconductor die are described. This semiconductor die is configured to communicate signals with another semiconductor die via proximity communication through one or more of the proximity connectors. Moreover, the semiconductor die includes a positive feature coupled to a second surface of the semiconductor die that facilitates mechanical alignment of the semiconductor die with the other semiconductor die. Note that a first region around the positive feature defines a first plane, and the positive feature protrudes above the first plane.
1. A semiconductor die, comprising:
proximity connectors proximate to a first surface of the semiconductor die, wherein the semiconductor die is configured to communicate signals with a second semiconductor die via proximity communication through one or more of the proximity connectors; and
a positive feature coupled to a second surface of the semiconductor die which facilitates mechanical alignment of the semiconductor die with the second semiconductor die, wherein a first region around the positive feature defines a first plane, and wherein the positive feature protrudes above the first plane; and
a stress-relief material coupled to the positive feature, wherein the stress relief material is configured to provide mechanical relief from stresses caused by at least one of relative motion or temperature differences when the positive feature has been used to align the first semiconductor die with the second semiconductor die.
2. The semiconductor die of claim 1 , wherein the positive feature is fabricated using an additive semiconductor manufacturing process in which material is added to the second surface.
3. The semiconductor die of claim 1 , wherein the positive feature is fabricated using a subtractive semiconductor manufacturing process in which material is subtracted from the second surface.
4. The semiconductor die of claim 1 , further comprising a negative feature coupled to a third surface of the semiconductor die, wherein a second region around the negative feature defines a second plane, and wherein the negative feature is recessed below the second plane.
5. The semiconductor die of claim 4 , wherein the negative feature includes a trench.
6. The semiconductor die of claim 4 , wherein the negative feature includes a depression, and wherein at least a portion of the depression has a pyramidal shape.
7. The semiconductor die of claim 4 , wherein the negative feature includes a slot.
8. The semiconductor die of claim 1 , wherein the positive feature facilitates coupling power to circuits on the semiconductor die.
9. The semiconductor die of claim 1 , wherein the positive feature facilitates coupling electrical signals or optical signals to the semiconductor die.
10. The semiconductor die of claim 1 , wherein the positive feature includes a key structure, and wherein the second semiconductor die which the semiconductor die is configured to couple to is determined by the key structure.
11. The semiconductor die of claim 1 , wherein the positive feature includes a ridge.
12. The semiconductor die of claim 1 , wherein the positive feature includes a protrusion, and wherein at least a portion of the protrusion has a pyramidal shape.
13. The semiconductor die of claim 1 , wherein the positive feature includes a protrusion, and wherein the protrusion has a top-hat shape.
14. The semiconductor die of claim 1 , wherein the positive feature includes a protrusion, and wherein at least a portion of the protrusion has a hemispherical shape.
15. The semiconductor die of claim 1 , wherein the positive feature includes a key structure with separate feature aspects in at least two dimensions, and wherein the feature aspects of the key structure are configured so that the first semiconductor die and the second semiconductor die can only be assembled in predetermined physical arrangements.
16. A system, comprising:
a first semiconductor die; and
a second semiconductor die,
wherein the first semiconductor die includes a first set of proximity connectors proximate to a first surface of the first semiconductor die and is configured to communicate signals with the second semiconductor die via proximity communication through the first set of proximity connectors;
wherein the second semiconductor die includes a second set of proximity connectors proximate to a second surface of the second semiconductor die and is configured to communicate signals with the first semiconductor die via proximity communication through the second set of proximity connectors;
wherein the first semiconductor die includes a positive feature coupled to a third surface of the first semiconductor die and the second semiconductor die includes a negative feature coupled to a fourth surface of the second semiconductor die;
wherein a first region around the positive feature defines a first plane and a second region around the negative feature defines a second plane;
wherein the positive feature protrudes above the first plane and the negative feature is recessed below the second plane;
wherein the positive feature couples to the negative feature, thereby facilitating alignment of the first set of proximity connectors and the second set of proximity connectors; and
a stress-relief material coupled between the positive feature and the negative feature, wherein the stress relief material is configured to provide mechanical relief from stresses caused by at least one of relative motion or temperature difference between the first semiconductor die and the second semiconductor die.
17. The system of claim 16 , wherein the positive feature includes a key structure and the negative feature includes a corresponding indentation, wherein each of the positive feature and the negative feature include separate feature aspects in at least two dimensions, and wherein the feature aspects are configured so that the first semiconductor die and the second semiconductor die can only be assembled in predetermined physical arrangements.
18. A method for reducing misalignment between two semiconductor dies, comprising:
positioning a first semiconductor die relative to a second semiconductor die, wherein the first semiconductor die and the second semiconductor die are configured to communicate signals via proximity communication through a first set of proximity connectors proximate to a first surface of the first semiconductor die and a second set of proximity connectors proximate a second surface of the second semiconductor die; and
coupling a positive feature, which is coupled to a third surface of the first semiconductor die, to a negative feature, which is coupled to a fourth surface of the second semiconductor die, wherein the coupling facilitates alignment of the first set of proximity connectors and the second set of proximity connectors;
wherein a first region around the positive feature defines a first plane and a second region around the negative feature defines a second plane;
wherein the positive feature protrudes above the first plane and the negative feature is recessed below the second plane; and
wherein coupling the positive feature to the negative feature includes coupling a stress-relief material between the positive feature and the negative feature, wherein the stress relief material is configured to provide mechanical relief from stresses caused by at least one of relative motion or temperature difference between the first semiconductor die and the second semiconductor die.
19. The method of claim 18 , wherein the positive feature includes a key structure and the negative feature includes a corresponding indentation, wherein each of the positive feature and the negative feature include separate feature aspects in at least two dimensions, and wherein the feature aspects are configured so that the first semiconductor die and the second semiconductor die can only be assembled in predetermined physical arrangements.