Power semiconductor module with flush terminal elements
A power semiconductor module includes a housing, terminal elements leading to the outside of the housing, an electrically insulated substrate arranged inside the housing, with the substrate being comprised of an insulating body and having on the first main face facing away from the base plate a plurality of connecting tracks electrically insulated from each other. The terminal and connecting elements are arranged on a connecting track in with contact faces contacting connecting tracks or power semiconductor components, with the individual contact faces having a plurality of partial contact faces. In one optional embodiment, each partial contact face has a maximum area of 20 mm 2 . In another embodiment, partial contact faces each are arranged at a distance of approximately 5 mm with regard to each other and the connection of the partial faces to the connecting tracks or the power semiconductor components is flush.
1. A power semiconductor module with a base plate, or for the purpose of direct assembly on a heat sink at least consisting of a housing, contact elements leading outwards for external load contacts, at least one electrically insulating substrate arranged within the housing, which in turn consists of an insulator body and a plurality of metallic connection tracks that are electrically insulated from each other and located on its first main surface facing away from the base plate or heat sink, power semiconductor components and connecting elements located thereon, and between two connection tracks and/or between connection tracks and power semiconductor components,
wherein at least one contact element and/or connecting element is constructed as a metallic shaped part with at least one end section, wherein each end section extends perpendicularly to an associated connection track and is butt soldered with at least one contact surface to this connecting track, wherein this contact surface is constructed as a plurality of partial contact surfaces wherein each partial contact surface has a maximum surface area of 20 mm 2 , and each pair of partial contact areas has a maximum separation of 5 mm from each other, wherein the end section of the contact element and/or connecting element includes in its extent two constrictions closely neighboring the contact surfaces and arranged a small distance apart, which are formed from two overlapping slits spaced apart from each other and wherein the structure with these constrictions and slits provides strain relief for said contact element and/or connecting element.
2. The power semiconductor module according to claim 1 ,
wherein the contact element and/or connecting element are constructed as metallic shaped parts made of copper with a surface made of tin or silver.
3. The power semiconductor module according to claim 1 ,
wherein the partial contact surfaces are spaced apart from each other by a distance of 1 mm to 5 mm.
4. The power semiconductor module according to claim 3 ,
wherein the contact element and/or connecting element has recesses between the partial contact surfaces, which are in the shape of a triangle with the base on the contact surface.
5. The power semiconductor module according to claim 3 ,
wherein the contact element and/or connecting element has recesses between the partial contact surfaces, which extend in the form of slits perpendicularly away from the contact surface.