Light emitting device, method for manufacturing light emitting device, and light emitting apparatus
A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.
1. A light emitting device comprising:
a conductive supporting substrate;
a reflecting layer on the conductive supporting substrate;
an adhesion layer including an oxide-based material on the reflecting layer;
a protective layer on a periphery of the adhesion layer;
an ohmic contact layer on the adhesion layer; and
a light emitting structure layer on the ohmic contact layer,
wherein at least a portion of the protective layer is disposed between the adhesion layer and the light emitting structure, and the oxide-based material of the adhesion layer contacts the protective layer.
2. The light emitting device of claim 1 , wherein the adhesion layer includes AZO (Al—ZnO) or IZO (In—ZnO).
3. The light emitting device of claim 1 , further comprising a seed layer for plating between the conductive supporting substrate and the reflecting layer.
4. The light emitting device of claim 1 , wherein a lateral surface of the ohmic contact layer is surrounded by the protective layer.
5. The light emitting device of claim 1 , wherein the protective layer includes at least one of SiO 2 , Si 3 N 4 , ITO, TiO 2 , AZO, and IZO.
6. The light emitting device of claim 1 , wherein the reflecting layer includes at least one of Ag, Al, Ag—Pd—Cu, and Ag—Cu.
7. The light emitting device of claim 1 , wherein the protective layer is a conductive protective layer.