Semiconductor device, electrooptical apparatus, and electronic system
A semiconductor device on a flexible substrate includes a semiconductor layer constituting a plurality of bottom-gate thin-film transistors, first wiring lines, second wiring lines, a first insulating layer, and a gate insulating film. The first insulating layer and the gate insulating film are present below the semiconductor layer, the first wiring lines, and the second wiring lines and are partially removed in regions where the semiconductor layer, the first wiring lines, and the second wiring lines are not disposed.
1. A semiconductor device on a flexible substrate, comprising:
a plurality of insulating layers disposed on the flexible substrate, each of the insulating layers having either a gate line or a source line formed thereon in a manner where the gate line or the source line is entirely overlapped by the insulating layer, the semiconductor device including both gate lines and source lines;
a plurality of gate insulating films formed over the gate lines and the source lines; and
a plurality of thin-film transistors and semiconductor films formed on the gate insulating films,
wherein the insulating layers and the gate insulating films are not disposed in regions where the gate lines and source lines are not disposed.
2. The semiconductor device of claim 1 , wherein the insulating layers are arranged in an island-like pattern.
3. The semiconductor device of claim 1 , wherein the gate insulating films are arranged in an island-like pattern.
4. The semiconductor device of claim 1 , wherein gate lines include first gate lines and second gate lines, the second gate lines electrically interconnecting adjacent first gate lines.
5. The semiconductor device of claim 4 , wherein the second gate lines are formed on the gate insulating films.
6. The semiconductor device of claim 4 , wherein the gate insulating film is disposed between the first gate lines and the second gate lines in thickness direction.