Light emitting device and method of manufacturing the same

1. A method of manufacturing a light emitting device, the method comprising:

providing a substrate;

forming a plurality of separated regions on the substrate;

forming an epitaxial layer including at least an active layer within each of the separated regions;

forming a second electrode layer on the epitaxial layer;

removing the substrate from the epitaxial layer;

forming a first electrode layer under the epitaxial layer; and

dividing the second electrode layer in chip units.

2. The method according to claim 1 , wherein the forming of the epitaxial layer comprises forming a plurality of barrier ribs on the substrate and forming the epitaxial layer at regions divided by the barrier ribs.

3. The method according to claim 2 , wherein the barrier ribs are formed by selectively etching the substrate.

4. The method according to claim 2 , wherein the second electrode layer is formed on the epitaxial layer and barrier ribs.

5. The method according to claim 1 , comprising, before forming the second electrode layer on the epitaxial layer, forming at least one of an ohmic contact layer and a seed layer on the epitaxial layer.

6. The method according to claim 2 , wherein the forming of the second electrode layer comprises forming a photoresist pattern at a location corresponding to the barrier ribs and forming the second electrode layer on regions divided by the photoresist pattern.

7. The method according to claim 5 , wherein the forming of the second electrode layer comprises forming a photoresist pattern at a location on the ohmic contact layer or the seed layer corresponding to regions where the epitaxial layer is divided and forming the second electrode layer on regions divided by the photoresist pattern.

8. The method according to claim 1 , comprising, after forming the second electrode layer on the epitaxial layer, forming an etch stop layer on the second electrode layer and forming a supporting layer on the etch stop layer.

9. The method according to claim 8 , comprising, after forming the first electrode layer under the epitaxial layer, removing the supporting layer and the etch stop layer.

10. The method according to claim 1 , wherein the dividing the second electrode layer is performed by a laser scribing process.

11. The method according to claim 1 , wherein the epitaxial layer comprises a first conductive semiconductor layer, the active layer, and a second conductive semiconductor layer.

12. A light emitting device, comprising:

a first electrode layer;

an epitaxial layer on the first electrode layer;

an ohmic contact layer on the epitaxial layer; and

a second electrode layer on the epitaxial layer, the second electrode layer having a larger area than the epitaxial layer and having the same area as the ohmic contact layer.

13. The light emitting device according to claim 12 , comprising a seed layer that is formed between the ohmic contact layer and the second electrode layer.

14. The light emitting device according to claim 12 , wherein a side surface of the second electrode layer and side surfaces of the ohmic contact layer and seed layer are located at a same vertical plane.

15. The light emitting device according to claim 12 , wherein the epitaxial layer comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

16. The light emitting device according to claim 12 , wherein the first electrode layer is formed of at least one of Ni, IZO, ITO, ZnO, RuO x , and IrO x .

17. The light emitting device according to claim 13 , wherein the ohmic contact layer is formed of at least one of Ni, IZO, ITO, ZnO, RuO x , and IrO x .

18. The light emitting device according to claim 13 , wherein the seed layer is formed of Ni/Ag or Ni/Cu.