Method of manufacturing semiconductor light emitting device
View Patent ↗Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
1. A method of manufacturing semiconductor light emitting devices comprising:
forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer on a substrate;
forming a roughness pattern on a region of the bottom of the substrate at least except a cleaving region for forming a cleaving plane;
forming n-electrodes on the region where the roughness pattern is formed.
2. The method of claim 1 , wherein forming the roughness pattern is performed by forming the roughness pattern on a region at least except the cleaving region and a separating region orthogonal to the cleaving region.
3. The method of claim 1 , wherein the forming of the roughness pattern comprises forming the roughness pattern only on the region where the n-electrodes are formed.
4. The method of claim 1 , wherein the substrate is a GaN substrate.
5. The method of claim 1 , wherein the forming of the roughness pattern comprises masking a region where the roughness pattern will not be formed using a protection material and wet etching the other region using an alkaline solution.
6. The method of claim 5 , wherein the protection material is selected from a photoresist material and a hard mask material such as SiO2, TiO2, Ai2O3, and the like.
7. The method of claim 5 , wherein the alkaline solution includes KOH and NaOH.
8. The method of claim 1 , wherein a maskless dry etching process is used in the forming of the roughness pattern.
9. The method of claim 1 , further comprising forming a plurality of ridges in the second material layer and forming a first p-electrode on each of the plurality of ridges.
10. The method of claim 9 , further comprising forming second p-electrodes on the region of the plurality of light emitting structures except the cleaving region.
11. The method of claim 10 , wherein the second p-electrodes are formed on the region except the cleaving region and separating region orthogonal to the cleaving region.
12. The method of claim 11 , wherein the substrate is a GaN substrate.