Nitride semiconductor light-emitting device and method for manufacturing the same
Disclosed are a nitride semiconductor light emitting device and a method for manufacturing the same. The nitride semiconductor light emitting device includes a first nitride layer, an active layer including at least one delta-doping layer on the first nitride layer through delta-doping, and a second nitride layer on the active layer.
1. A nitride semiconductor light emitting device, comprising:
a first nitride layer;
an active layer on the first nitride layer, the active layer including an InGaN well layer, at least one delta-doping layer that indium (In) is delta-doped into the InGaN well layer, and a GaN barrier layer; and
a second nitride layer on the active layer,
wherein the at least one delta-doping layer contains more indium nitride (InN) than the InGaN well layer.
2. The nitride semiconductor light emitting device as claimed in claim 1 , wherein the active layer has a multi-stack structure including the at least one delta-doping layer and at least one InGaN layer adjacent to the at least one delta-doping layer.
3. The nitride semiconductor light emitting device as claimed in claim 1 , wherein the active layer is prepared as at least one-periodic active layer, and the one-periodic active layer includes:
the InGaN well layer on the first nitride layer;
the at least one delta-doping layer on the InGaN well layer; and
the GaN barrier layer on the at least one delta-doping layer.
4. The nitride semiconductor light emitting device as claimed in claim 3 , wherein the GaN barrier layer has a thickness of about 15 nm to about 20 nm.
5. The nitride semiconductor light emitting device as claimed in claim 1 , wherein the active layer is prepared as at least one-periodic active layer, and the one-periodic active layer includes:
the at least one delta-doping layer on the first nitride layer;
the InGaN well layer on the at least one delta-doping layer; and
the GaN barrier layer on the InGaN well layer.
6. The nitride semiconductor light emitting device as claimed in claim 5 , wherein the GaN barrier layer has a thickness of about 15 nm to about 20 nm.
7. The nitride semiconductor light emitting device as claimed in claim 1 , wherein the first nitride layer includes at least one n-type nitride layer and the second nitride layer includes at least one p-type nitride layer.
8. The nitride semiconductor light emitting device as claimed in claim 1 , further comprising:
a reflective layer on at least one side surface of layers forming the light emitting device.
9. The nitride semiconductor light emitting device as claimed in claim 8 , wherein the at least one side surface is inclined at a predetermined inclination angle.
10. The nitride semiconductor light emitting device as claimed in claim 9 , wherein the predetermined inclination angle is in a range of about 10° to about 80° relative to a substrate.
11. The nitride semiconductor light emitting device as claimed in claim 8 , wherein the reflective layer includes a semiconductor layer having compounds based on Al X In y GaN/GaN (0≦x≦1, 0≦y≦1).
12. The nitride semiconductor light emitting device as claimed in claim 11 , wherein the AlxInyGaN/GaN layers are alternately deposited on the lateral surfaces of the light emitting device.
13. The nitride semiconductor light emitting device as claimed in claim 1 , further comprising:
a buffer layer under the first nitride layer.
14. The nitride semiconductor light emitting device as claimed in claim 13 , wherein the buffer layer comprises an InGaN buffer layer.
15. The nitride semiconductor light emitting device as claimed in claim 1 , wherein the active layer is formed by doping indium (In) with the content of 20% or more.
16. The nitride semiconductor light emitting device as claimed in claim 1 , wherein the active layer is formed with a plurality of quantum dots without causing lattice defect by doping indium (In) with the content of 20% or more.
17. The nitride semiconductor light emitting device as claimed in claim 1 , further comprising:
a P-type ohmic contact transparent electrode layer over the second nitride layer.
18. The nitride semiconductor light emitting device as claimed in claim 17 , wherein the P-type ohmic contact transparent electrode layer is formed by using one selected from metal oxides consisting of ZnO, RuO, NiO, CoO, and ITO (Indium-Tin-Oxide).
19. The nitride semiconductor light emitting device as claimed in claim 1 , wherein the at least one delta doping layer comprises at least one InN layer.
20. A nitride semiconductor light emitting device, comprising:
a first nitride layer;
an active layer on the first nitride layer, the active layer including an InGaN well layer, at least one nitride layer that indium (In) is delta-doped into the InGaN well layer, and a GaN barrier layer; and
a second nitride layer on the active layer,
wherein the at least one nitride layer of the active layer contains more indium nitride (InN) than the InGaN well layer.
21. The nitride semiconductor light emitting device as claimed in claim 20 , wherein the at least one nitride layer of the active layer comprises at least one InN layer.