IP Library Granted Patent US 8,030,745
Granted Patent B2
US 8,030,745 · App. 10/590,271 · Granted Oct 4, 2011

ID chip and IC card

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,030,745
App. No.
10/590,271
Granted
Oct 4, 2011
Kind
B2
Abstract

The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit.

Claims (91)

1. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the light-receiving element has a layer for conducting photoelectric conversion using a non-single crystal thin film,

wherein the light-emitting element has an electroluminescent layer using a non-single crystal thin film,

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna, and

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit on the same substrate.

2. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna, and

wherein the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

3. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna, and

wherein the antenna, the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

4. A semiconductor device comprising:

an integrated circuit;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the integrated circuit comprises a connection terminal, a rectification circuit configured to rectify an alternating voltage generated by an antenna, a power supply circuit configured to generate a power supply voltage by using a voltage outputted from the rectification circuit, a demodulation circuit, and a logic circuit, and

wherein the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

5. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the light-receiving element has a layer for conducting photoelectric conversion using a non-single crystal thin film,

wherein the light-emitting element has an electroluminescent layer using a non-single crystal thin film,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent, and

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna.

6. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent, and

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna.

7. A semiconductor device comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the antenna, the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent, and

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna.

8. A semiconductor device comprising:

an integrated circuit;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the integrated circuit comprises a connection terminal, a rectification circuit configured to rectify an alternating voltage generated by an antenna, a power supply circuit configured to generate a power supply voltage by using a voltage outputted from the rectification circuit, a demodulation circuit, and a logic circuit,

wherein the integrated circuit, the light-emitting element and the light-receiving element are formed integrally, and

wherein the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent.

9. The semiconductor device according to any one of claims 5 to 8 , wherein the substrate is a plastic substrate.

10. An IC card comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna, and

wherein the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

11. The IC card according to claim 10 , wherein the antenna, the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

12. An IC card comprising:

an integrated circuit;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the integrated circuit comprises a connection terminal, a rectification circuit configured to rectify an alternating voltage generated by an antenna, a power supply circuit configured to generate a power supply voltage by using a voltage outputted from the rectification circuit, a demodulation circuit, and a logic circuit, and

wherein the integrated circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

13. An IC card comprising:

an antenna;

an integrated circuit comprising a thin film transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the antenna, the light-emitting element and the light-receiving element are electrically connected to the integrated circuit,

wherein the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent,

wherein the integrated circuit includes a power supply circuit configured to generate a power supply voltage from an alternating voltage generated by the antenna.

14. The IC card according to claim 13 , wherein the antenna and the integrated circuit in addition to the light-emitting element and the light-receiving element are attached to the substrate with an adhesive agent.

15. The IC card according to claim 12 , wherein the integrated circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent.

16. The IC card according to any one of claims 12 - 13 , wherein the substrate is a plastic substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 22, 2006
From: YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 018226/0342 →
Priority Claims (1)
JP 2004-060103 · Mar 4, 2004 · national
Continuity (1)
Related Publication 20070176622A1 · Aug 2, 2007