IP Library Granted Patent US 8,043,733
Granted Patent B2
US 8,043,733 · App. 12/039,112 · Granted Oct 25, 2011

Bit patterned medium

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,043,733
App. No.
12/039,112
Granted
Oct 25, 2011
Kind
B2
Abstract

A bit patterned medium in which an exchange coupling layer induces exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The exchange coupling layer is disposed either over or under a recording layer having a plurality of bits. The exchange coupling layer induces exchange coupling between a bit which is to be recorded and an adjacent bit and reduces a switching field difference resulting from a difference between the magnetization direction of the bit to be recorded and the magnetization direction of neighboring bits due to an exchange coupling force generated during the exchange coupling.

Claims (32)

1. A bit patterned medium comprising:

a magnetic recording layer including a plurality of bits; and

an exchange coupling layer which induces exchange coupling between adjacent bits of the magnetic recording layer,

wherein each of the plurality of bits has a column shape having a predetermined height and a top surface,

wherein the plurality of bits are separated from each other by non-magnetic regions,

wherein the exchange coupling layer is formed of a ferromagnetic material, and

wherein the exchange coupling layer has an exchange coupling constant ranging from 0.001e-6 erg/cm 2 to 1e-6 erg/cm 2 .

2. The bit patterned medium of claim 1 , wherein the exchange coupling layer is disposed one of over and under the magnetic recording layer.

3. The bit patterned medium of claim 1 , wherein the exchange coupling layer is formed of any one selected from a Co alloy, such as CoCrPtB, CoCrPt, or CoPt, an alloy having an L1 0 ordered phase, such as CoPt or FePt, CoFeCrB, CoFe, NiFe, and CoNiFe.

4. The bit patterned medium of claim 3 , wherein the magnetic recording layer is formed of any one selected from a Co alloy, such as CoCrPtB, CoCrPt, or CoPt, and an alloy having an L1 0 ordered phase, such as CoPt or FePt.

5. The bit patterned medium of claim 1 , wherein the magnetic recording layer is formed of any one selected from a Co alloy, such as CoCrPtB, CoCrPt, or CoPt, and an alloy having an L1 0 ordered phase, such as CoPt or FePt.

6. The bit patterned medium of claim 1 , further comprising:

a substrate on which the magnetic recording layer is formed;

a soft magnetic underlayer disposed between the magnetic recording layer and the substrate; and

an intermediate layer disposed between the magnetic recording layer and the soft magnetic underlayer.

7. The bit patterned medium of claim 6 , wherein the exchange coupling layer is disposed one of over the magnetic recording layer and disposed between the magnetic recording layer and the intermediate layer.

8. The bit patterned medium of claim 1 , wherein the exchange coupling layer is disposed under the magnetic recording layer, and is integrally formed with the magnetic recording layer.

9. The bit patterned medium of claim 1 , wherein the bit patterned medium is disk-shaped.

10. A bit patterned medium comprising:

a magnetic layer including a plurality of bits; and

an exchange coupling layer configured to induce exchange coupling between a bit which is recorded and an adjacent bit of the plurality of bits thereby reducing a switching field difference,

wherein each of the plurality of bits has a column shape having a predetermined height and a top surface,

wherein the plurality of bits are separated from each other by non-magnetic regions,

wherein the exchange coupling layer is formed of a ferromagnetic material, and

wherein the exchange coupling layer has an exchange coupling constant ranging from 0.001e-6 erg/cm 2 to 1e-6 erg/cm 2 .

11. A bit patterned medium comprising:

a magnetic recording layer including a plurality of bits arranged in a regular pattern; and

an exchange coupling layer which induces exchange coupling between adjacent bits of the magnetic recording layer,

wherein the exchange coupling layer is formed of a ferromagnetic material, and

wherein the exchange coupling layer has an exchange coupling constant ranging from 0.001e-6 erg/cm 2 to 1e-6 erg/cm 2 .

12. The bit patterned medium of claim 11 , wherein the plurality of bits are arranged in a substantially uniform pattern.

13. The bit patterned medium of claim 11 , wherein the plurality of bits are configured as an ordered array of uniform islands.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE ERRONEOUSLY FILED NO. 7255478 FROM SCHEDULE PREVIOUSLY RECORDED AT REEL: 028153 FRAME: 0689. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 5, 2016
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 040001/0920 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SEAGATE TECHNOLOGY INTERNATIONAL
Reel/Frame 028153/0689 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 28, 2008
From: LEE, HOO-SAN; LEE, SUNG-CHUL; OH, HOON-SANG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 020575/0965 →
Priority Claims (1)
KR 10-2007-0087692 · Aug 30, 2007 · national
Continuity (1)
Related Publication 20090061259A1 · Mar 5, 2009