Thin-film transistors
A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.
1. A thin-film transistor having improved mobility and flexibility, comprising
a gate dielectric layer; and
a semiconducting layer, wherein the semiconducting layer comprises a semiconducting polymer and an insulating polymer;
wherein the semiconducting polymer is selected from the group consisting of polymers A to C:
wherein R and R′ are independently selected from hydrogen, alkyl or substituted alkyl containing from 1 to about 20 carbon atoms, a heteroatom-comprising group, and halogen; and n is a integer from about 3 to about 200.
2. The transistor of claim 1 , wherein the semiconducting polymer has a crystallinity of greater than 50 percent.
3. The transistor of claim 1 , wherein the semiconducting polymer has a melting point of 100° C. or higher.
4. The transistor of claim 1 , wherein the semiconducting polymer has a melting point of 200° C. or higher.
5. The transistor of claim 1 , wherein the insulating polymer is selected from the group consisting of polystyrene, poly(α-methylstyrene), poly(4-vinyl biphenyl), poly(vinyl cinnamate), and polysiloxane.
6. The transistor of claim 1 , wherein the insulating polymer is an amorphous polymer having a weight average molecular weight of at least 2,000 g/mol.
7. The transistor of claim 1 , wherein the insulating polymer has a weight average molecular weight of from about 5,000 to about 1,000,000 g/mol.
8. The transistor of claim 1 , wherein the insulating polymer comprises from about 0.1 to about 60 percent by weight of the semiconducting layer.
9. The transistor of claim 1 , wherein the insulating polymer comprises from about 0.1 to about 20 percent by weight of the semiconducting layer.
10. The transistor of claim 1 , wherein the semiconducting layer is substantially homogeneous.
11. The transistor of claim 1 , wherein the transistor has a field effect mobility at least 10% higher than a transistor having the same semiconducting polymer but lacking the insulating polymer.
12. The transistor of claim 1 , wherein the transistor has a field effect mobility at least 25% higher than a transistor having the same semiconducting polymer but lacking the insulating polymer.
13. The transistor of claim 1 , wherein the transistor has a threshold voltage of −10 V or greater.
14. The transistor of claim 1 , wherein the semiconducting layer has a yield point elongation at least 10% greater compared to a semiconducting layer having the same semiconducting polymer but lacking the insulating polymer.
15. The transistor of claim 1 , wherein the semiconducting layer has a yield point elongation equal to or greater than the yield point elongation of the gate dielectric layer.
16. The transistor of claim 1 , wherein the semiconducting layer has a yield point elongation of from about 1% to about 25%.
17. A thin-film transistor having improved mobility and flexibility, comprising
a gate dielectric layer; and
a substantially homogeneous semiconducting layer comprising a semiconducting polymer and an insulating polymer;
wherein the semiconducting polymer has the formula of polymer A:
wherein R and R′ are independently selected from hydrogen, alkyl or substituted alkyl containing from 1 to about 20 carbon atoms, a heteroatom-comprising group, and halogen; and n is a integer from about 3 to about 200; and
wherein the insulating polymer is polystyrene having a molecular weight of 100,000 grams per mole or greater.