Method for manufacturing non-volatile memory and structure thereof
A method for manufacturing a non-volatile memory and a structure thereof are provided. The manufacturing method comprises the following steps. Firstly, a substrate is provided. Next, a semiconductor layer is formed on the substrate. Then, a Si-rich dielectric layer is formed on the semiconductor layer. After that, a plurality of silicon nanocrystals is formed in the Si-rich dielectric layer by a laser annealing process to form a charge-storing dielectric layer. Last, a gate electrode is formed on the charge-storing dielectric layer.
1. A non-volatile memory, comprising:
a substrate;
a semiconductor layer disposed on the substrate, wherein the semiconductor layer comprises:
a first doping area;
a second doping area; and
a channel area located between the first doping area and the second doping area;
a charge-storing dielectric layer disposed on the semiconductor layer and made from a Si-rich dielectric material, wherein the charge-storing dielectric layer comprises:
a charge tunneling area made from the Si-rich dielectric material and located on the semiconductor layer;
a charge storage area made from the Si-rich dielectric material, wherein the charge storage area has a plurality of silicon nanocrystals and is located on the charge tunneling area; and
a charge barrier area made from the Si-rich dielectric material and located on the charge storage area; and
a gate electrode disposed on the charge-storing dielectric layer.
2. The non-volatile memory according to claim 1 , further comprising:
a source electrode electrically connected to the first doping area; and
a drain electrode electrically connected to the second doping area.
3. The non-volatile memory according to claim 1 , further comprising:
an inner dielectric layer covering on the semiconductor layer, the gate electrode and the charge-storing dielectric layer.
4. The non-volatile memory according to claim 1 , further comprising:
a buffer layer disposed between the semiconductor layer and the substrate.
5. The non-volatile memory according to claim 1 , wherein the refractive index of the Si-rich dielectric material is greater than 1.5.
6. The non-volatile memory according to claim 1 , wherein the molecular formula of the Si-rich dielectric material is expressed as SiOx, x is greater than 0 but smaller than 2.
7. The non-volatile memory according to claim 1 , wherein the molecular formula of the Si-rich dielectric material is expressed as SiNy, y is greater than 0 but smaller than 4/3.
8. The non-volatile memory according to claim 1 , wherein the molecular formula of Si-rich silicon oxynitride is expressed as SiOxNy, (x+y) is greater than 0 but smaller than 2.
9. The non-volatile memory according to claim 1 , wherein the particle diameter of the silicon nanocrystals ranges between 0.5-20 nanometer.
10. The non-volatile memory according to claim 1 , wherein the semiconductor layer comprises a polycrystalline layer.
11. The non-volatile memory according to claim 1 , further comprising a tunneling dielectric layer located between the semiconductor layer and the charge-storing dielectric layer.
12. The non-volatile memory according to claim 1 , further comprising a barrier dielectric layer located between the charge-storing dielectric layer and the gate electrode.
13. The non-volatile memory according to claim 12 , wherein a material of the Si-rich dielectric layer is Silicon-rich silicon nitride, and materials of the tunneling dielectric layer and the barrier dielectric layer are Silicon-rich silicon oxide, respectively.
14. The non-volatile memory according to claim 1 , further comprising a light blocking layer located between the semiconductor layer and the substrate is aligned with the channel area of the semiconductor layer.