Semiconductor device

1. A semiconductor device comprising:

two inverters; and

two selection transistors,

the two inverters and the two selection transistors being arranged in a matrix form on a substrate,

one of the two inverters being a first inverter arranged in a first row and a second column,

the first inverter including

a first pillar that is formed by integrating, into one piece, a first first-conductivity-type semiconductor, a first second-conductivity-type semiconductor whose polarity is different from a polarity of the first first-conductivity-type semiconductor, and a first insulating material which is disposed between the first first-conductivity-type semiconductor and the first second-conductivity-type semiconductor, and that vertically extends with respect to the substrate,

a first second-conductivity-type high-concentration semiconductor which is disposed on the first first-conductivity-type semiconductor and whose polarity is different from the polarity of the first first-conductivity-type semiconductor,

a second second-conductivity-type high-concentration semiconductor which is disposed under the first first-conductivity-type semiconductor and whose polarity is different from the polarity of the first first-conductivity-type semiconductor,

a first first-conductivity-type high-concentration semiconductor which is disposed on the first second-conductivity-type semiconductor and whose polarity is different from the polarity of the first second-conductivity-type semiconductor,

a second first-conductivity-type high-concentration semiconductor which is disposed under the first second-conductivity-type semiconductor and whose polarity is different from the polarity of the first second-conductivity-type semiconductor,

a first gate insulating material formed around the first pillar, and

a first gate conductive material formed around the first gate insulating material,

the other inverter being a second inverter arranged in a second row and a first column,

the second inverter including

a second pillar that is formed by integrating, into one piece, a second first-conductivity-type semiconductor, a second second-conductivity-type semiconductor whose polarity is different from a polarity of the second first-conductivity-type semiconductor, and a second insulating material which is disposed between the second first-conductivity-type semiconductor and the second second-conductivity-type semiconductor, and that vertically extends with respect to the substrate,

a third second-conductivity-type high-concentration semiconductor which is disposed on the second first-conductivity-type semiconductor and whose polarity is different from the polarity of the second first-conductivity-type semiconductor,

a fourth second-conductivity-type high-concentration semiconductor which is disposed under the second first-conductivity-type semiconductor and whose polarity is different from the polarity of the second first-conductivity-type semiconductor,

a third first-conductivity-type high-concentration semiconductor which is disposed on the second second-conductivity-type semiconductor and whose polarity is different from the polarity of the second second-conductivity-type semiconductor,

a fourth first-conductivity-type high-concentration semiconductor which is disposed under the second second-conductivity-type semiconductor and whose polarity is different from the polarity of the second second-conductivity-type semiconductor,

a second gate insulating material formed around the second pillar, and

a second gate conductive material formed around the second gate insulating material,

one of the two selection transistors being a selection transistor arranged in the first row and the first column,

the selection transistor, which is arranged in the first row and the first column, including

a third pillar that includes a third first-conductivity-type semiconductor,

a fifth second-conductivity-type high-concentration semiconductor which is disposed on the third first-conductivity-type semiconductor and whose polarity is different from a polarity of the third first-conductivity-type semiconductor,

a sixth second-conductivity-type high-concentration semiconductor which is disposed under the third first-conductivity-type semiconductor and whose polarity is different from the polarity of the third first-conductivity-type semiconductor,

a third gate insulating material formed around the third pillar, and

a third gate conductive material formed around the third gate insulating material,

the other selection transistor being a selection transistor arranged in the second row and the second column,

the selection transistor, which is arranged in the second row and the second column, including

a fourth pillar that includes a fourth first-conductivity-type semiconductor,

a seventh second-conductivity-type high-concentration semiconductor which is disposed on the fourth first-conductivity-type semiconductor and whose polarity is different from a polarity of the fourth first-conductivity-type semiconductor,

an eighth second-conductivity-type high-concentration semiconductor which is disposed under the fourth first-conductivity-type semiconductor and whose polarity is different from the polarity of the fourth first-conductivity-type semiconductor,

a fourth gate insulating material formed around the fourth pillar, and

a fourth gate conductive material formed around the fourth gate insulating material.

2. The semiconductor device according to claim 1 , wherein

the second first-conductivity-type high-concentration semiconductor, the second second-conductivity-type high-concentration semiconductor, and the eighth second-conductivity-type high-concentration semiconductor are connected to one another,

the eighth second-conductivity-type high-concentration semiconductor and the second gate conductive material are connected to each other,

the fourth first-conductivity-type high-concentration semiconductor, the fourth second-conductivity-type high-concentration semiconductor, and the sixth second-conductivity-type high-concentration semiconductor are connected to one another, and

the sixth second-conductivity-type high-concentration semiconductor and the first gate conductive material are connected to each other.

3. The semiconductor device according to claim 1 , wherein the first to fourth first-conductivity-type semiconductors, the first and second second-conductivity-type semiconductors, the first to fourth first-conductivity-type high-concentration semiconductors, and the first to eighth second-conductivity-type high-concentration semiconductors are formed of silicon.

4. The semiconductor device according to claim 2 , wherein the first to fourth first-conductivity-type semiconductors, the first and second second-conductivity-type semiconductors, the first to fourth first-conductivity-type high-concentration semiconductors, and the first to eighth second-conductivity-type high-concentration semiconductors are formed of silicon.

5. The semiconductor device according to claim 1 , wherein the first conductivity type is p type and the second conductivity type is n type.

6. The semiconductor device according to claim 2 , wherein the first conductivity type is p type and the second conductivity type is n type.