Anti-reflection structures for CMOS image sensors
View Patent ↗Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
1. A semiconductor structure comprising:
a photodiode located in a semiconductor layer;
a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode;
an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer; and
a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances, wherein a pitch of said array of protuberances is less than 270 nm.
2. The semiconductor structure of claim 1 , wherein said pitch is a sub-lithographic dimension.
3. The semiconductor structure of claim 1 , wherein said array is a regular hexagonal array.
4. The semiconductor structure of claim 1 , wherein each of said protuberances has a shape of a cone having a monotonically decreasing cross-sectional area as a function of a vertical distance from a base of said cone.
5. The semiconductor structure of claim 1 , further comprising a flat dielectric portion located directly on said interconnect level dielectric layer and having a same composition as said protuberance-containing dielectric portion.
6. The semiconductor structure of claim 5 , wherein said flat dielectric portion has a first thickness, and wherein each of said protuberances has a height from a base to an apex, and wherein said protuberance-containing dielectric portion comprises a constant thickness portion abutting each base of said protuberances and having a second thickness, wherein said first thickness is substantially equal to a sum of said second thickness and said height.
7. A semiconductor structure comprising:
a photodiode located in a semiconductor layer;
a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode;
an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer; and
a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances, wherein said array is a regular hexagonal array.
8. The semiconductor structure of claim 7 , wherein a pitch of said array of protuberances is less than 270 nm.
9. The semiconductor structure of claim 8 , wherein said pitch is a sub-lithographic dimension.
10. The semiconductor structure of claim 7 , wherein each of said protuberances has a shape of a cone having a monotonically decreasing cross-sectional area as a function of a vertical distance from a base of said cone.
11. The semiconductor structure of claim 7 , further comprising a flat dielectric portion located directly on said interconnect level dielectric layer and having a same composition as said protuberance-containing dielectric portion.
12. The semiconductor structure of claim 11 , wherein said flat dielectric portion has a first thickness, and wherein each of said protuberances has a height from a base to an apex, and wherein said protuberance-containing dielectric portion comprises a constant thickness portion abutting each base of said protuberances and having a second thickness, wherein said first thickness is substantially equal to a sum of said second thickness and said height.
13. A semiconductor structure comprising:
a photodiode located in a semiconductor layer;
a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode;
an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer; and
a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances, wherein each of said protuberances has a shape of a cone having a monotonically decreasing cross-sectional area as a function of a vertical distance from a base of said cone.
14. The semiconductor structure of claim 13 , wherein a pitch of said array of protuberances is less than 270 nm.
15. The semiconductor structure of claim 14 , wherein said pitch is a sub-lithographic dimension.
16. The semiconductor structure of claim 13 , wherein said array is a regular hexagonal array.
17. The semiconductor structure of claim 13 , further comprising a flat dielectric portion located directly on said interconnect level dielectric layer and having a same composition as said protuberance-containing dielectric portion.
18. The semiconductor structure of claim 17 , wherein said flat dielectric portion has a first thickness, and wherein each of said protuberances has a height from a base to an apex, and wherein said protuberance-containing dielectric portion comprises a constant thickness portion abutting each base of said protuberances and having a second thickness, wherein said first thickness is substantially equal to a sum of said second thickness and said height.
19. A semiconductor structure comprising:
a photodiode located in a semiconductor layer;
a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode;
an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer;
a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances; and
a flat dielectric portion located directly on said interconnect level dielectric layer and having a same composition as said protuberance-containing dielectric portion.
20. The semiconductor structure of claim 19 , wherein a pitch of said array of protuberances is less than 270 nm.
21. The semiconductor structure of claim 20 , wherein said pitch is a sub-lithographic dimension.
22. The semiconductor structure of claim 19 , wherein said array is a regular hexagonal array.
23. The semiconductor structure of claim 19 , wherein each of said protuberances has a shape of a cone having a monotonically decreasing cross-sectional area as a function of a vertical distance from a base of said cone.
24. The semiconductor structure of claim 19 , wherein said flat dielectric portion has a first thickness, and wherein each of said protuberances has a height from a base to an apex, and wherein said protuberance-containing dielectric portion comprises a constant thickness portion abutting each base of said protuberances and having a second thickness, wherein said first thickness is substantially equal to a sum of said second thickness and said height.