Light emitting device with translucent ceramic plate
A light emitting device comprising a light emitting component that emits light with a first peak wavelength, and at least one sintered ceramic plate over the light emitting component is described. The at least one sintered ceramic plate is capable of absorbing at least a portion of the light emitted from said light emitting component and emitting light of a second peak wavelength, and has a total light transmittance at the second peak wavelength of greater than about 40%. A method for improving the luminance intensity of a light emitting device comprising providing a light emitting component and positioning at least one translucent sintered ceramic plate described above over the light emitting component is also disclosed.
1. A light emitting device comprising:
a light emitting component that emits light with a first peak wavelength of about 440 nm to about 470 nm;
at least one sintered ceramic plate over the light emitting component, wherein the at least one sintered ceramic plate comprises a multiphasic material, said multiphasic material comprises about 95% to about 99.5% by volume of an emissive phase and about 5% to about 0.5% by volume of a second phase; and
wherein the at least one sintered ceramic plate is capable of absorbing at least a portion of the light emitted from said light emitting component and emitting light of a second peak wavelength, and has a total light transmittance at the second peak wavelength of greater than about 40%.
2. The light emitting device of claim 1 , wherein the multiphasic material comprises about 98% to about 99.5% by volume of the emissive phase and about 2% to about 0.5% by volume of the second phase.
3. The light emitting device of claim 1 , wherein said at least one sintered ceramic plate is prepared by using nano-sized raw ceramic powders having an average particle size of less than 1000 nm.
4. The light emitting device of claim 1 , wherein said at least one sintered ceramic plate further comprises about 0.05% to about 5% by weight of a sintering aid.
5. The light emitting device of claim 4 , wherein said sintering aid is selected from the group consisting of MgO, SiO 2 and tetraethyl orthosilicate.
6. The light emitting device of claim 1 , wherein the emissive phase comprises a phosphor material.
7. The light emitting device of claim 6 , wherein the phosphor material comprises a garnet represented by the formula A 3 B 5 O 12 , wherein A and B are trivalent metals, and wherein A is selected from Y, Gd, La, and Tb, and B is selected from Al, Ga, and In.
8. The light emitting device of claim 7 , wherein said garnet is doped with at least one rare earth metal.
9. The light emitting device of claim 8 , wherein said rare earth metal is selected from Ce, Gd, La, Tb, Pr and Eu.
10. The light emitting device of claim 6 , wherein said phosphor material comprises Y 3 Al 5 O 12 :Ce 3+ .
11. The light emitting device of claim 1 , wherein said second phase comprises a material selected from the group consisting of Y 2 O 3 , Al 2 O 3 , YAP, and YAM.
12. The light emitting device of claim 1 , wherein said second phase is Al 2 O 3 or Y 2 O 3 .
13. The light emitting device of claim 1 , wherein said second phase forms a plurality of particles dispersed within the emissive phase.
14. The light emitting device of claim 1 , wherein said emissive phase comprises Y 3 Al 5 O 12 :Ce 3+ and said second phase comprises Al 2 O 3 .
15. A method for improving the luminance intensity of a light emitting device comprising:
providing a light emitting component; and
positioning at least one sintered ceramic plate comprising a multiphasic material over the light emitting component, said multiphasic material comprises about 95% to about 99.5% by volume of an emissive phase and about 5% to about 0.5% by volume of a second phase, wherein the at least one sintered ceramic plate has a transmittance of at least about 40% at the peak transmission wavelength, thereby emitting white light from said light emitting device.
16. The method of claim 15 , wherein the multiphasic material comprises about 98% to about 99.5% by volume of the emissive phase, and about 2% to about 0.5% by volume of the second phase.
17. The method of claim 15 , wherein said at least one sintered ceramic plate is prepared by using nano-sized raw ceramic powders having an average particle size of less than 1000 nm.
18. The method of claim 15 , wherein said at least one sintered ceramic plate further comprises about 0.05% to about 5% by weight of a sintering aid.
19. The method of claim 18 , wherein said sintering aid is selected from the group consisting of MgO, SiO 2 and tetraethyl orthosilicate.
20. The method of claim 15 , wherein the emissive phase comprises a phosphor material.
21. The method of claim 20 , wherein the phosphor material comprises a garnet represented by the formula A 3 B 5 O 12 , wherein A and B are trivalent metals, and wherein A is selected from Y, Gd, La, and Tb, and B is selected from Al, Ga, and In.
22. The method of claim 21 , wherein said garnet is doped with at least one rare earth metal.
23. The method of claim 22 , wherein said rare earth metal is selected from Ce, Gd, La, Tb, Pr and Eu.
24. The method of claim 20 , wherein said phosphor material comprises Y 3 Al 5 O 12 :Ce 3+ .
25. The method of claim 15 , wherein said second phase comprises a material selected from the group consisting of Y 2 O 3 , Al 2 O 3 , YAP, and YAM.
26. The method of claim 15 , wherein said second phase is Al 2 O 3 or Y 2 O 3 .