IP Library Granted Patent US 8,174,180
Granted Patent B2
US 8,174,180 · App. 13/007,089 · Granted May 8, 2012

Light-emitting device having scattering reflector with preset square average inclination

Assignees: Kabushiki Kaisha Toshiba; Toshiba Materials Co., Ltd.
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Quick Facts
Patent No.
US 8,174,180
App. No.
13/007,089
Granted
May 8, 2012
Kind
B2
Abstract

A light emitting device 1 includes a light emitting diode, a phosphor layer containing phosphors that emit a visible light by being excited by a light emitted from the light emitting diode, and a reflector disposed to surround the light emitting diode. A portion of 50% or more in an area ratio of a reflecting surface of the reflector is formed as a scattering surface with a mean square inclination (Δq) (0.1 mm) in a range of not less than 0.003 nor more than 0.03.

Claims (18)

1. A light emitting device, comprising: a light emitting diode; a phosphor layer containing phosphors that emit a visible light by being excited by a light emitted from the light emitting diode; and a reflector being disposed to surround the light emitting diode and having a reflecting surface, wherein at least 50% in an area ratio of the reflecting surface of the reflector is formed as a scattering surface with a mean square inclination (Δq) in a range of not less than 0.003 nor more than 0.03.

2. The light emitting device according to claim 1 , wherein at least 80% in the area ratio of the reflecting surface is formed as the scattering surface.

3. The light emitting device according to claim 1 , wherein the mean square inclination (Δq) in the scattering surface is in a range of not less than 0.008 nor more than 0.02.

4. The light emitting device according to claim 1 ,

wherein an inclination angle of the reflecting surface of the reflector is in a range of 0 to 40°.

5. The light emitting device according to claim 1 ,

wherein a shortest distance between the light emitting diode and the reflecting surface of the reflector is 0.2 mm or less.

6. The light emitting device according to claim 1 ,

wherein the light emitting diode has an emission peak wavelength of 420 nm or less.

7. The light emitting device according to claim 1 ,

wherein the phosphor layer emits a white light.

8. The light emitting device according to claim 1 ,

wherein the light emitting device is a package-shaped light emitting device having a surface-mount structure or a side-view structure.

9. The light emitting device according to claim 8 ,

wherein a length in a longitudinal direction of the package-shaped light emitting device is not less than 2 mm nor more than 3 mm.

10. A backlight, comprising the light emitting device according to claim 1 .

11. A liquid crystal display device, comprising the backlight according to claim 10 .

12. An illumination device, comprising the light emitting device according to claim 1 .

Assignments (3)
NUNC PRO TUNC ASSIGNMENT Recorded Nov 26, 2021
From: TOSHIBA MATERIALS CO.,LTD.
To: SEOUL SEMICONDUCTOR CO.,LTD.
Reel/Frame 058251/0316 →
NUNC PRO TUNC ASSIGNMENT Recorded Jun 21, 2021
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MATERIALS CO., LTD.
Reel/Frame 057436/0701 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 14, 2011
From: INOUE, TETSUO; TAKEUCHI, HAJIME; OOYA, YASUMASA; SHIMAOOGI, TOSHIO; SHIRAKAWA, YASUHIRO
To: KABUSHIKI KAISHA TOSHIBA; TOSHIBA MATERIALS CO., LTD.
Reel/Frame 025644/0378 →
Priority Claims (1)
JP 2008-185870 · Jul 17, 2008 · national
Continuity (2)
Continuation PCTJP2009003334 · Jul 15, 2009
Related Publication 20110109222A1 · May 12, 2011