Solid-state imaging device, manufacturing method for the same, and imaging apparatus
View Patent ↗A solid-state imaging device includes: a pixel section including, in a semiconductor substrate, plural photoelectric conversion sections that photoelectrically convert incident light to generate signal charges; metal wirings formed, on a first insulating film formed on the semiconductor substrate, above regions among the photoelectric conversion sections and above the periphery of the pixel section; a second insulating film formed on the first insulating film to cover the metal wirings; a first light shielding film formed on the second insulating film and having an opening above the pixel section; and a second light shielding film formed above the metal wirings above the pixel section and having thickness smaller than that of the first light shielding film.
1. A solid-state imaging device comprising:
a first insulating film between a semiconductor substrate and metal wirings, a second insulating film being between said metal wirings and a light shielding film,
wherein said light shielding film includes a first light shielding film and a second light shielding film, said second light shielding film having a thickness smaller than that of said first light shielding film,
wherein a color filter layer is between said second insulating film and said second light shielding film, said color filter layer having a filter layer for a color and a filter layer for another color.
2. A solid-state imaging device according to claim 1 , wherein said first light shielding film is in contact with said second insulating film.
3. A solid-state imaging device according to claim 1 , wherein a portion of said second insulating film is between said first light shielding film and said second insulating film.
4. A solid-state imaging device according to claim 1 , wherein said second light shielding film is in contact with said second insulating film.
5. A solid-state imaging device according to claim 1 , wherein said second insulating film is from the group consisting of a silicon nitride film, a silicon oxide nitride film, and a silicon oxide film.
6. A solid-state imaging device according to claim 1 , wherein an opening through said first light shielding film exposes said second insulating film, said second light shielding film being within said opening.
7. A solid-state imaging device according to claim 1 , wherein said second light shielding film is between said second insulating film and said color filter layer.
8. A solid-state imaging device according to claim 1 , wherein said first light shielding film is an insulative resin, said insulative resin having light shielding properties.
9. A solid-state imaging device according to claim 8 , wherein said insulative resin is a black insulative resin.
10. A solid-state imaging device according to claim 8 , wherein said insulative resin is a photosensitive insulative resin.
11. A solid-state imaging device according to claim 8 , wherein said insulative resin is a negative resist.
12. A solid-state imaging device according to claim 8 , wherein said insulative resin is an acrylic negative resist.
13. A solid-state imaging device according to claim 8 , wherein said insulative resin is a polyimide negative resist.
14. A solid-state imaging device according to claim 1 , wherein said second light shielding film is an insulative resin, said insulative resin having light shielding properties.
15. A solid-state imaging device according to claim 14 , wherein said insulative resin is a black insulative resin.
16. A solid-state imaging device according to claim 14 , wherein said insulative resin is a photosensitive insulative resin.
17. A solid-state imaging device according to claim 14 , wherein said insulative resin is a negative resist.
18. A solid-state imaging device according to claim 14 , wherein said insulative resin is an acrylic negative resist.
19. A solid-state imaging device according to claim 14 , wherein said insulative resin is a polyimide negative resist.
20. A solid-state imaging device according to claim 1 , wherein said light shielding film has an average transmittance with respect to light, said average transmittance being equal to or higher than 5% and equal to or lower than 40%.
21. A solid-state imaging device according to claim 20 , wherein said light is in a range of wavelength from 400 nm to 700 nm or in a wavelength band of visible light.
22. A solid-state imaging device according to claim 20 , further comprising:
a photoelectric conversion section in said semiconductor substrate, said photoelectric conversion section being configured to convert said light into a signal charge.
23. An imaging apparatus comprising:
the solid-state imaging device according to claim 20 ;
a condensing optical unit configured to condense said light onto said solid-state imaging device.