Light emitting device

1. A light emitting device, comprising:

a first electrode;

a light emitting structure including a first semiconductor layer over the first electrode, an active layer over the first semiconductor layer, and a second semiconductor layer over the active layer;

a second electrode over the second semiconductor layer; and

a connection member electrically connected to the second electrode and disposed between the second semiconductor layer and the first semiconductor layer while forming a schottky contact with the first semiconductor layer.

2. The light emitting device of claim 1 , wherein the light emitting structure includes a groove, which extends through the second semiconductor layer and the active layer to expose the first semiconductor layer.

3. The light emitting device of claim 2 , wherein the groove is locally formed in the light emitting structure and has a dent shape.

4. The light emitting device of claim 2 , wherein the groove is formed along an outer peripheral portion of the light emitting structure.

5. The light emitting device of claim 4 , wherein the groove has a dent shape.

6. The light emitting device of claim 1 , wherein the connection member is integrally formed with the second electrode.

7. The light emitting device of claim 2 , further comprising an insulating member between the light emitting structure and the connection member at a lateral side of the groove.

8. The light emitting device of claim 7 , wherein the insulating member is disposed at lateral sides of the second semiconductor layer, the active layer, and the first semiconductor layer, respectively.

9. The light emitting device of claim 1 , wherein the first semiconductor layer includes a contact interface having a concavo-convex structure on a surface thereof.

10. The light emitting device of claim 9 , wherein the contact interface has a potential barrier higher than operational voltage of the light emitting structure.

11. The light emitting device of claim 1 , wherein the connection member is spaced apart from the second electrode.

12. The light emitting device of claim 1 , further comprising an ohmic contact layer between the first electrode and the first semiconductor layer.

13. The light emitting device of claim 12 , further comprising a reflective layer between the first electrode and the ohmic contact layer.

14. The light emitting device of claim 12 , further comprising a current blocking layer between the ohmic contact layer and the first semiconductor layer.

15. The light emitting device of claim 14 , wherein at least a portion of the current blocking layer is overlapped with the second electrode in a vertical direction.

16. The light emitting device of claim 1 , further comprising a passivation layer on at least one side of the light emitting structure.

17. The light emitting device of claim 1 , wherein the first electrode includes a support member having conductivity.

18. A light emitting device, comprising:

a first electrode including a support member having conductivity;

a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer over the first electrode;

a second electrode over the second semiconductor layer;

a connection member disposed between the first and second semiconductor layers and contacting the first and second semiconductor layers, wherein the connection member forms a schottky contact with one of the first and second semiconductor layers;

an insulating member between a lateral side of the light emitting structure and the connection member; and

a passivation layer over the lateral side of the light emitting structure.

19. A light emitting device, comprising:

a first electrode including a support member having conductivity;

a reflective layer over the first electrode;

a protective layer along an outer peripheral portion of a top surface of the reflective layer;

an ohmic contact layer over the top surface of the reflective layer and an inside side of the protective layer;

a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer over the ohmic contact layer and the protective layer;

a second electrode over the second semiconductor layer;

a connection member electrically connected to the second electrode and disposed between the first and second semiconductor layers while forming a schottky contact with the first semiconductor layer; and

an insulating member between a lateral side of the light emitting structure and the connection member.