Thin film transistors comprising surface modified carbon nanotubes
A thin film transistor has a semiconducting layer comprising a semiconductor and surface-modified carbon nanotubes. The semiconducting layer has improved charge carrier mobility.
1. An organic thin-film transistor comprising a substrate, a dielectric layer, and a semiconducting layer, wherein the semiconducting layer comprises an organic semiconductor and surface-modified carbon nanotubes (SMCNTs),
wherein the SMCNTs are modified with a non-conjugated group selected from the group consisting of polymers or oligomers of polystyrene, polyvinyl alcohol, polyacrylate, polyimide, polyamide, polysiloxane, alkoxy, alkoxyalkyl, cyano, and nitro.
2. The transistor of claim 1 , wherein the SMCNTs are dispersed substantially throughout the organic semiconductor.
3. The transistor of claim 2 , wherein the SMCNTs are present in the amount of from about 0.001 to about 10 weight percent, based on the weight of the organic semiconductor.
4. The transistor of claim 2 , wherein the SMCNTs are present in the amount of from about 0.01 to about 5 weight percent, based on the weight of the organic semiconductor.
5. The transistor of claim 1 , wherein the semiconducting layer comprises a first layer and a second layer; the SMCNTs are present in the first layer and the organic semiconductor is present in the second layer; and the first layer is located closer to the dielectric layer than the second layer.
6. The transistor of claim 1 , wherein the SMCNTs are single-wall carbon nanotubes, double-wall carbon nanotubes, or multi-wall carbon nanotubes.
7. The transistor of claim 1 , wherein the transistor has a charge carrier mobility of greater than 0.01 cm 2 /V·sec.
8. The transistor of claim 1 , wherein the transistor has a mobility that is at least 10% greater than a transistor without SMCNTs in the organic semiconducting layer.
9. An organic thin-film transistor comprising a substrate, a dielectric layer, and a semiconducting laver, wherein the semiconducting layer comprises an organic semiconductor and surface-modified carbon nanotubes (SMCNTs); wherein the semiconducting layer comprises a first layer and a second laver; the SMCNTs are present in the first layer and the organic semiconductor is present in the second layer and the first layer is located closer to the dielectric layer than the second layer; and wherein wherein the SMCNTs are present in greater than 10% by volume of the total volume of the semiconducting layer.
10. An organic thin-film transistor comprising a substrate, a dielectric layer, and a semiconducting layer, wherein the semiconducting layer comprises an organic semiconductor and surface-modified carbon nanotubes (SMCNTs): and wherein the semiconducting layer further comprises non-surface-modified carbon nanotubes (non-SMCNTs).
11. The transistor of claim 10 , wherein the non-SMCNTs are present in the amount of from about 0.001 to about 10 weight percent, based on the weight of the organic semiconductor.
12. The transistor of claim 10 , wherein the non-SMCNTs are present in the amount of from about 0.01 to about 5 weight percent, based on the weight of the organic semiconductor.
13. A semiconducting layer comprising an organic semiconductor and SMCNTs, wherein the SMCNTs are modified with a thiophene-based oligomer or polymer of Formula A or B:
wherein x, y, and z are independently integers from 0 to 7; m is an integer from 1 to 3; n is an integer from 1 to 50; w is an integer from 0 to 5; R and R′ are independently selected from hydrogen, halogen, alkyl, alkoxyalkyl, siloxyalkyl, and perfluoroalkyl; and
D is a divalent linkage.
14. A thin-film transistor comprising a substrate, a dielectric layer, and a semiconducting layer, wherein the semiconducting layer comprises an inorganic semiconductor and surface-modified carbon nanotubes (SMCNTs).
15. An organic thin-film transistor comprising a substrate, a dielectric layer, and a semiconducting layer, wherein the semiconducting layer comprises an organic semiconductor and surface-modified carbon nanotubes (SMCNTs), wherein the SMCNTs are modified with inorganic nanoparticles selected from the group consisting of gold, silver, nickel, copper, ZnO, CdSe, Zn a In b O c (where a, b, and c are integers), GaAs, ZnO—SnO 2 , SnO 2 , and ZnSe nanoparticles.