Semiconductor integrated circuit device and manufacturing method thereof
View Patent ↗Provided is a semiconductor integrated circuit device including fuse elements for carrying out laser trimming processing, in which a space width between aluminum interconnects of the first layer to be connected to the adjacent fuse elements is set to less than twice of the thickness of the side wall of the metal interlayer insulating film of the first layer, thereby preventing exposure of the SOG layer having hygroscopic property. In addition, side spacers are provided to side surfaces of the aluminum interconnects of the first layer.
1. A semiconductor integrated circuit device, comprising:
an element isolation insulating film disposed on a semiconductor substrate;
fuse elements disposed on the element isolation insulating film;
an insulating film disposed on the fuse elements;
first interconnects connected to the fuse elements via contact holes in the insulating film, the first interconnects having a sidewall surface and an upper surface; and
a first metal interlayer insulating film overlying the sidewall surface and the upper surface of the first interconnects, and an SOG film and a second metal interlayer insulating film overlying the first metal interlayer insulating film and the first interconnects;
wherein a space width between the first interconnects connected to adjacent ones of the fuse elements is less than twice a thickness of the first metal interlayer insulating film overlying the sidewall of the first interconnects.
2. A semiconductor integrated circuit device according to claim 1 , further comprising side spacers provided on the sidewall surfaces of the first interconnect, wherein the first metal interlayer insulating film covers the first interconnect and the side spacers.
3. A semiconductor integrated circuit device according to claim 2 , wherein the side spacers comprise a material selected from the group consisting of: an oxide silicon film; a phosphor silica glass (PSG) film; and a nitride silicon film.