Nitride semiconductor light-emitting element and method of manufacturing the same
An object of the present invention is to provide a nitride semiconductor light-emitting device in which contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining satisfactory external quantum efficiency, and a method of efficiently producing the nitride semiconductor light-emitting device. Specifically, the present invention characteristically provides a nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, characterized in that: the n-type laminate includes an n-contact layer made of an Al x Ga 1-x N material (0.7≦x≦1.0) and an n-clad layer provided on the n-contact layer; and an interlayer made of an Al y Ga 1-y N material (0≦y≦0.5) is provided on a partially exposed portion, on the light-emitting layer side, of the n-contact layer.
1. A nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, wherein:
the n-type laminate includes an n-contact layer made of an Al x Ga 1-x N material, such that 0.7≦x≦1.0 and an n-clad layer provided on the n-contact layer; and
an interlayer made of an Al y Ga 1-y N material, such that 0≦y≦0.5, is provided on a partially exposed portion, on the light-emitting layer side, of the n-contact layer.
2. The nitride semiconductor light-emitting device of claim 1 , further comprising an electron blocking layer between the light-emitting layer and the p-type laminate.
3. The nitride semiconductor light-emitting device of claim 2 , wherein the resistance between the n-contact layer and the n-side electrode is equal to or less than 10Ω, and the external quantum efficiency is equal to or higher than 0.70%.
4. The nitride semiconductor light-emitting device of claim 1 , wherein the resistance between the n-contact layer and the n-side electrode is equal to or less than 10Ω, and the external quantum efficiency is equal to or higher than 0.70%.
5. A method of producing a nitride semiconductor light-emitting device, comprising the steps of:
forming a semiconductor laminated body by sequentially growing on a substrate an n-type laminate including an n-contact layer and an n-clad layer, a light-emitting layer, and a p-type laminate including a p-clad layer and a p-contact layer in this order;
forming an interlayer and an n-side electrode on the n-contact layer; and
forming a p-side electrode on the p-contact layer,
wherein the n-contact layer is formed of an Al x Ga 1-x N material such that 0.7≦x≦1.0, and the interlayer is formed of an Al y Ga 1-y N material such that 0≦y≦0.5.
6. The method of producing a nitride semiconductor light-emitting device of claim 5 , further comprising exposing a portion, on the light-emitting layer side, of the n-contact layer by dry etching, and then growing the Al y Ga 1-y N material on the exposed portion of the n-contact layer by MOCVD.