Sputtering composite target, method for manufacuturing transparent conductive film using the same and transparent conductive film-provided base material
A sputtering composite target includes: an oxide based component containing indium oxide; and a carbon based component.
1. A sputtering composite target comprising:
an oxide-based component containing indium oxide and having a target surface area; and
a carbon-based component laminated on at least a portion of the target surface area of the oxide-based component such that an area ratio occupied by the carbon-based component is from 2 to 15% relative to 100% of the target surface area;
wherein the carbon-based component comprises at least one of a carbon powder, a carbon chip and a carbide material including at least one of Al 4 C 3 , NbC, TaC and ZrC.
2. The sputtering composite target according to claim 1 , wherein the sputtering composite target comprises at least one element selected from the group consisting of tin, zinc, tungsten and germanium.
3. The sputtering composite target according to claim 2 , wherein a proportion of a content of the element is from 1.0 to 30.0% by mass.
4. The sputtering composite target according to claim 1 , wherein a content of the carbon-based component is from 0.6 to 6.0 parts by weight based on 100 parts by weight of the oxide-based component.
5. The sputtering composite target according to claim 1 , wherein the oxide-based component is a sintered body, and the carbon-based component is a non-sintered body.
6. The sputtering composite target according to claim 1 , further comprising a metal element comprising at least one of tin, zinc, tungsten and germanium.
7. A method for manufacturing a transparent conductive film comprising the act of:
forming a transparent conductive film on a substrate using a sputtering composite target comprising an oxide-based component containing indium oxide having a target surface area and a carbon-based component laminated on at least a portion of the target surface area of the oxide-based component such that an area ratio occupied by the carbon-based component is from 2 to 15% relative to 100% of the target surface area;
wherein forming a transparent conductive film on a substrate comprises introducing a sputtering gas into a chamber at a gas flow rate of from 5 to 50 sccm.
8. The method for manufacturing a transparent conductive film according to claim 7 , wherein the substrate is a sheet or film of a plastic.
9. The method for manufacturing a transparent conductive film according to claim 7 , wherein the substrate is not heated.
10. The method for manufacturing a transparent conductive film of claim 7 , wherein forming a transparent conductive film on a substrate comprises maintaining a gas pressure from 0.5 to 2.0 Pa within the chamber.
11. The method for manufacturing a transparent conductive film of claim 7 , wherein forming a transparent conductive film on a substrate comprises maintaining the substrate at room temperature.
12. A sputtering composite target comprising:
an oxide-based component containing indium oxide and having a target surface area;
a carbon-based component laminated on at least a portion of the target surface area of the oxide-based component such that an area ratio occupied by the carbon-based component is from 2 to 15% relative to 100% of the target surface area;
wherein the carbon-based component comprises at least one of a carbon powder, a carbon chip and a carbide materials including at least one of Al 4 C 3 , NbC, TaC and ZrC;
wherein the oxide-based component comprises a disc shape; and
wherein the carbon-based component comprises at least one sector shape disposed on a surface of the disc shaped oxide-based component and having a prescribed angle.