Pressure detection apparatus, Josephson device, and superconducting quantum interference device that include superconductor thin film that undergoes transition from superconductor to insulator by pressure

1. A pressure detection apparatus comprising:

a housing configured to maintain at an absolute temperature of 10 Kelvin or less;

a plurality of superconductor thin films disposed in the housing and having different critical pressures at which a transition from a superconductor to an insulator occurs; and

a detection device configured to detect, among the plurality of superconductor thin films, a superconductor thin film transiting from the superconductor to the insulator, and detecting, as an internal pressure of the housing, a maximum critical pressure in the critical pressure of the detected superconductor thin film.

2. The pressure detection apparatus according to claim 1 further comprising:

a plurality of first electrodes disposed so as to be associated with the plurality of superconductor thin films and connected to one ends of the associated superconductor thin films; and

a plurality of second electrodes disposed so as to be associated with the plurality of superconductor thin films and connected to another ends of the associated superconductor thin films,

wherein the detection device is configured to detect, among the plurality of superconductor thin films, a superconductor thin film transiting from the superconductor to the insulator by detecting current flowing between the first and second electrodes disposed at the both ends of the superconductor thin films.

3. The pressure detection apparatus according to claim 1 , wherein the plurality of superconductor thin films are composed of a plurality of CuIr 2 S 4 that contain a dopant in different amounts.

4. A Josephson device comprising:

a superconductor thin film kept at an absolute temperature of 10 K or less and composed of CuRh 2 S 4 ; and

a pressure application unit configured to apply a pressure of a critical pressure at which a transition from a superconductor to an insulator occurs or more to a portion of the superconductor thin film, and wherein the pressure application unit includes a pressing member configured to press a projection member onto the portion of the superconductor thin film.

5. The Josephson device according to claim 4 , wherein the pressure application unit includes a plurality of projection members; and wherein the pressing member is configured to press the plurality of projection members onto the portion of the superconductor thin film.

6. The Josephson device according to claim 5 , wherein the pressing member includes an electrostrictive element or a piezoelectric element.

7. The Josephson device according to claim 5 , wherein the pressure application unit includes an electrostrictive element disposed so as to be in contact with the portion of the superconductor thin film.

8. A superconducting quantum interference device comprising:

a superconductor thin film haying a shape of a ring, and including CuRh 2 S 4 kept at an absolute temperature of 10 K or less;

a first pressure application unit configured to apply a pressure of a critical pressure at which a transition from a superconductor to an insulator occurs or more to a first portion of the superconductor thin film; and

a second pressure application unit configured to apply a pressure of the critical pressure or more to a second portion of the superconductor thin film, the second portion being different from the first portion.

9. The superconducting quantum interference device according to claim 8 , wherein each of the first and second pressure application units includes:

a plurality of projection members; and

a pressing member configured to press the plurality of projection members onto the portion of the superconductor thin film.