Method for fabricating light emitting device

1. A method for fabricating a light emitting device comprising:

forming an oxide including gallium aluminum over a gallium oxide substrate;

forming a nitride including gallium aluminum over the oxide including gallium aluminum; and

forming a light emitting structure over the nitride including gallium aluminum.

2. The method of claim 1 , wherein the oxide including gallium aluminum comprises Ga x Al y O z (0 x≦1, 0 y≦1, 0 z≦1).

3. The method of claim 1 , wherein the oxide including gallium aluminum has a thickness of 1 μm or less.

4. The method of claim 1 , wherein the nitride including gallium aluminum comprises Ga x Al y N z (0 x≦1, 0 y≦1, 0 z≦1).

5. The method of claim 1 , wherein forming the light emitting structure comprises:

forming a second conductive semiconductor layer over the nitride including gallium aluminum;

forming an active layer over the second conductive semiconductor layer; and

forming a first conductive semiconductor layer over the active layer.

6. The method of claim 1 , wherein the gallium oxide substrate comprises a Ga 2 O 3 substrate.

7. The method of claim 1 , wherein the oxide including gallium aluminum is formed at a thickness of 1 μm or less.

8. The method of claim 1 , wherein the oxide including gallium aluminum is formed by using a thin film deposition device.

9. The method of claim 1 , wherein the forming the oxide including gallium aluminum comprises:

forming an aluminum layer over the gallium oxide substrate; and

performing a heat treatment with respect to the aluminum layer over the gallium oxide substrate.

10. The method of claim 1 , wherein the nitride including gallium aluminum is formed by using a thin film deposition device.