Semiconductor light emitting device and method for manufacturing the same
A semiconductor light emitting device includes an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer. The first delta-doped layer, the second nitride semiconductor layer, the second delta-doped layer, and the third nitride semiconductor layer are doped with an n-type dopant.
1. A light emitting device comprising:
an active layer;
a first nitride semiconductor layer on the active layer;
a first delta-doped layer on the first nitride semiconductor layer;
a second nitride semiconductor layer on the first delta-doped layer;
a second delta-doped layer on the second nitride semiconductor layer;
a third nitride semiconductor layer on the second delta-doped layer,
wherein the first delta-doped layer, the second nitride semiconductor layer, the second delta-doped layer, and the third nitride semiconductor layer are doped with an n-type dopant.
2. The light emitting device according to claim 1 , further comprising a semiconductor layer including a semiconductor material having a composition formula of In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) under the active layer.
3. The light emitting device according to claim 1 , wherein the third nitride semiconductor layer is formed of a semiconductor material having a composition formula of In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1).
4. The light emitting device according to claim 1 , wherein the first nitride semiconductor layer is an undoped semiconductor layer.
5. The light emitting device according to claim 1 , wherein the first nitride semiconductor layer includes GaN layer.
6. The light emitting device according to claim 1 , wherein the n-type dopant includes at least one of Si, Ge, or Sn.
7. The light emitting device according to claim 1 , wherein the active layer includes InGaN layer and GaN layer.
8. A light emitting device comprising:
an active layer;
a first nitride semiconductor layer on the active layer;
a first delta-doped layer on the first nitride semiconductor layer, the first delta-doped layer including a first n-type dopant;
a second nitride semiconductor layer on the first delta-doped layer, the second nitride semiconductor layer including a second n-type dopant;
a second delta-doped layer on the second nitride semiconductor layer, the second delta-doped layer including a third n-type dopant; and
a third nitride semiconductor layer on the second delta-doped layer.
9. The light emitting device according to claim 8 , further comprising a semiconductor layer including a semiconductor material having a composition formula of In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) under the active layer.
10. The light emitting device according to claim 8 , wherein the third nitride semiconductor layer is formed of a semiconductor material having a composition formula of In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1).
11. The light emitting device according to claim 8 , wherein the first nitride semiconductor layer is an undoped semiconductor layer.
12. The light emitting device according to claim 8 , wherein the first nitride semiconductor layer includes a GaN layer.
13. The light emitting device according to claim 8 , wherein at least one of the first n-type dopant, the second n-type dopant, and the third n-type dopant includes at least one of Si, Ge, or Sn.
14. The light emitting device according to claim 8 , wherein the active layer includes an InGaN layer and a GaN layer.
15. A light emitting device comprising:
an active layer;
a first nitride semiconductor layer on the active layer;
a first delta-doped layer on the first nitride semiconductor layer, the first delta-doped layer including a first p-type dopant;
a second nitride semiconductor layer on the first delta-doped layer, the second nitride semiconductor layer including a second p-type dopant;
a second delta-doped layer on the second nitride semiconductor layer, the second delta-doped layer including a third p-type dopant; and
a third nitride semiconductor layer on the second delta-doped layer.
16. The light emitting device according to claim 15 , further comprising a semiconductor layer including a semiconductor material having a composition formula of In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) under the active layer.
17. The light emitting device according to claim 15 , wherein the third nitride semiconductor layer is formed of a semiconductor material having a composition formula of In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1).
18. The light emitting device according to claim 15 , wherein the first nitride semiconductor layer is an undoped semiconductor layer.
19. The light emitting device according to claim 15 , wherein the first nitride semiconductor layer includes a GaN layer.
20. The light emitting device according to claim 15 , wherein the active layer includes an InGaN layer and a GaN layer.