Thin film transistor array panel and method for manufacturing the same

1. A thin film transistor array panel comprising:

a substrate:

a signal line disposed on the substrate and including copper (Cu);

a passivation layer disposed on the signal line and having a contact hole exposing a portion of the signal line; and

a conductive layer disposed on the passivation layer and connected to the portion of the signal line through the contact hole,

wherein the passivation layer includes an organic passivation layer that includes an organic insulator that does not include sulfur, the organic passivation layer including an alkali soluble resin and a photosensitizer, the photosensitizer including at least one of a 2-(4-methoxyphenyl)-4 derivative and a halomethylated triazin derivative.

2. The thin film transistor array panel of claim 1 , wherein

the organic passivation layer has negative photosensitivity.

3. The thin film transistor array panel of claim 1 , wherein

the passivation layer further includes an inorganic passivation layer disposed under the organic passivation layer and including an inorganic insulator.

4. The thin film transistor array panel of claim 1 , wherein

the signal line includes a lower conductive layer and an upper conductive layer,

the upper conductive layer includes copper, and

the lower conductive layer includes at least one of titanium (Ti), tantalum (Ta), nickel (Ni), molybdenum (Mo), neodymium (Nb), tungsten (W), indium (In), tin (Sn), gold (Au), and chromium (Cr).

5. The thin film transistor array panel of claim 1 , further comprising

a gate insulating layer formed on the substrate,

the signal line includes a gate line disposed under the gate insulating layer, and

the contact hole is extended through the gate insulating layer.

6. The thin film transistor array panel of claim 2 , wherein

the passivation layer further includes an inorganic passivation layer disposed under the organic passivation layer and including an inorganic insulator.

7. A method for manufacturing a thin film transistor array panel, comprising:

forming a signal line including copper on a substrate;

depositing a first passivation layer on the signal line;

coating an organic material layer including an organic material having photosensitivity on the first passivation layer;

irradiating light to the organic material layer through a mask to pattern the organic material layer, after patterning, a portion of the first passivation layer is exposed, and a first portion of the organic material layer has a thinner thickness than a remaining portion of the organic material layer;

forming a contact hole exposing a portion of the signal line in the first passivation layer by using the patterned organic material layer as an etching mask; and

forming a conductive layer connected to the signal line through the contact hole,

wherein the forming of the contact hole comprises using a first etching gas including a fluorine-based gas and a second etching gas including oxygen gas, and

the flow ratio (sccm) of the first etching gas to the second etching gas is more than 1/7.

8. The method of claim 7 , wherein

the first etching gas includes sulfur hexafluoride (SF 6 ).

9. The method of claim 7 , wherein

the signal line includes a lower conductive layer and an upper conductive layer,

the upper conductive layer includes copper, and

the lower conductive layer includes at least one of titanium (Ti), tantalum (Ta), nickel (Ni), molybdenum (Mo), neodymium (Nb), tungsten (W), indium (In), tin (Sn), gold (Au), and chromium (Cr).

10. The method of claim 7 , further comprising

removing the organic material layer.

11. The method of claim 7 , wherein

the organic material layer forms a second passivation layer disposed under the conductive layer.

12. The method of claim 7 , wherein

the mask is a photomask includes a transparent region through which light is transmitted, an opaque region at which light is blocked, and a translucent region through which light is partially transmitted, and

wherein the first portion of the organic material layer corresponds to the translucent region of the photomask.

13. The method of claim 12 , further comprising

ashing the organic material layer to remove the first portion.

14. The method of claim 13 , wherein

the ashing to remove the first portion comprises using oxygen plasma gas.

15. The method of claim 14 , further comprising

cleaning by using a cleaning material including a stripping agent or hydrogen fluoride (HF) after the ashing to remove the first portion.

16. A method for manufacturing a thin film transistor array panel, comprising:

forming a signal line including copper on a substrate;

depositing a first passivation layer on the signal line;

coating an organic material layer including an organic material having photosensitivity on the first passivation layer;

irradiating light to the organic material layer through a mask to pattern the organic material layer;

forming a contact hole exposing a portion of the signal line in the first passivation layer by using the patterned organic material layer as an etching mask; and

forming a conductive layer connected to the signal line through the contact hole,

wherein the forming of the contact hole is executed in a chamber including an electrode for forming a plasma gas, and

the electrode is supplied with a source power and a bias power, and

a ratio of the bias power to the source power is equal to or less than 3.

17. A method for manufacturing a thin film transistor array panel, comprising:

forming a signal line including copper on a substrate;

depositing a first passivation layer on the signal line;

coating an organic material layer including an organic material having photosensitivity on the first passivation layer;

irradiating light to the organic material layer through a mask to pattern the organic material layer, after patterning, a portion of the first passivation layer is exposed, and a first portion of the organic material layer has a thinner thickness than a remaining portion of the organic material layer;

forming a contact hole exposing a portion of the signal line in the first passivation layer by using the patterned organic material layer as an etching mask;

ashing to remove a portion of the organic material layer;

cleaning the exposed portion of the signal line by using a cleaning material including a stripping agent or hydrogen fluoride (HF), and

forming a conductive layer connected to the signal line through the contact hole.

18. The method of claim 17 , wherein

the ashing comprises using oxygen plasma gas.