Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substantially spherical substrate particles to the at least one first conductor; converting the substrate particles into a plurality of substantially spherical diodes; forming at least one second conductor coupled to the substantially spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.
1. A method of manufacturing an electronic apparatus, the method comprising:
forming a plurality of first conductors coupled to a base;
coupling a plurality of substantially spherical substrate particles to the plurality of first conductors, wherein each substantially spherical substrate particle of the plurality of substantially spherical substrate particles comprises a semiconductor;
subsequent to the coupling to the plurality of first conductors, converting the plurality of substantially spherical substrate particles into a plurality of substantially spherical diodes by depositing a dopant material onto the plurality of substantially spherical substrate particles and annealing or alloying the dopant material with the plurality of substantially spherical substrate particles to form a pn junction in each substantially spherical substrate particle, wherein a mean diameter of the plurality of substantially spherical diodes is greater than about twenty (20) microns and less than about forty (40) microns; and
forming a plurality of second conductors coupled to the plurality of substantially spherical diodes.
2. The method of claim 1 , further comprising:
depositing a plurality of lenses suspended in a first polymer.
3. The method of claim 2 , wherein the plurality of lenses have at least a first index of refraction and wherein the first polymer has at least a second, different index of refraction.
4. The method of claim 2 , wherein the step of depositing further comprises:
printing the plurality of lenses suspended in the first polymer over the plurality of substantially spherical diodes and the plurality of second conductors.
5. The method of claim 2 , wherein each lens of the plurality of lenses is substantially spherical and a ratio of a mean diameter of the plurality of lenses to a mean diameter of the plurality of substantially spherical diodes is substantially about five to one (5:1).
6. The method of claim 2 , wherein each lens of the plurality of lenses is substantially spherical and a ratio of a mean diameter of the plurality of lenses to a mean diameter of the plurality of substantially spherical diodes is between about ten to one (10:1) and two to one (2:1).
7. The method of claim 2 , wherein the comparative size or spacing of the plurality of lenses provide a mode coupling to the plurality of substantially spherical diodes.
8. The method of claim 1 , wherein the plurality of lenses comprise borosilicate glass or polystyrene latex.
9. The method of claim 1 , wherein the plurality of substantially spherical diodes are semiconductor light emitting diodes or photovoltaic diodes.
10. The method of claim 1 , further comprising:
attaching a prefabricated layer to the plurality of substantially spherical diodes, the prefabricated layer comprising a plurality of lenses suspended in a first polymer.
11. The method of claim 1 , wherein the semiconductor is selected from the group consisting of: gallium nitride, gallium arsenide, silicon, and mixtures thereof.
12. The method of claim 1 , wherein the step of forming the plurality of first conductors further comprises:
depositing a first conductive medium within a plurality of channels in the base.
13. The method of claim 12 , wherein the first conductive medium comprises a conductive ink or a conductive polymer.
14. The method of claim 12 , wherein the first conductive medium comprises at least one media selected from the group consisting of: a silver conductive ink, a copper conductive ink, a gold conductive ink, an aluminum conductive ink, a tin conductive ink, a carbon conductive ink, a carbon nanotube polymer, a conductive polymer, and mixtures thereof.
15. The method of claim 12 , further comprising:
partially curing the first conductive medium.
16. The method of claim 15 , wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:
depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a carrier medium; and
fully curing the first conductive medium.
17. The method of claim 12 , wherein the step of depositing a first conductive medium comprises sputtering, coating, vapor depositing or electroplating a metal, a metal alloy, or a combination of metals.
18. The method of claim 17 , wherein the metal, metal alloy, or combination of metals comprise at least one metal selected from the group consisting of:
aluminum, copper, silver, nickel, gold, and mixtures thereof.
19. The method of claim 12 , wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:
depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a reactive carrier medium;
removing the reactive carrier medium; and
curing or re-curing the first conductive medium.
20. The method of claim 12 , wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:
depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in an anisotropic conductive medium; and
compressing the plurality of substantially spherical substrate particles suspended in the anisotropic conductive medium.
21. The method of claim 12 , wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:
depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a volatile carrier medium; and
evaporating the volatile carrier medium.
22. The method of claim 12 , wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:
depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a carrier medium; and
annealing or alloying the plurality of substantially spherical substrate particles within the plurality of channels.
23. The method of claim 12 , wherein the plurality of channels are spaced-apart and substantially parallel.
24. The method of claim 12 , wherein the plurality of channels are at least partially hemispherically-shaped and are disposed in an array.
25. The method of claim 12 , wherein the plurality of channels are spaced-apart and least partially parabolic.
26. The method of claim 12 , wherein the base further comprises a plurality of angled ridges.
27. The method of claim 12 , wherein the plurality of spaced-apart channels further comprise a plurality of integrally formed projections or supports.
28. The method of claim 27 , wherein the plurality of first conductors are coupled to the plurality of integrally formed projections or supports within the plurality of spaced-apart channels and wherein the step of coupling the plurality of substantially spherical substrate particles to the plurality of first conductors further comprises:
depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a carrier medium; and
annealing, or alloying, or chemically coupling the plurality of substantially spherical substrate particles to the plurality of first conductors.
29. The method of claim 1 , wherein the annealing or alloying is laser or thermal annealing or alloying.
30. The method of claim 1 , wherein the dopant material is a substrate liquid or film.
31. The method of claim 1 , wherein the dopant material is a dopant element or compound suspended in a carrier.
32. The method of claim 1 , wherein the dopant material is deposited on a first, upper portion of the plurality of substantially spherical substrate particles to form a substantially hemispherical shell or capped pn junction.
33. The method of claim 32 , wherein about fifteen percent to fifty-five percent of a surface of each diode of substantially all of the plurality of substantially spherical diodes has a penetration layer or region having a first majority carrier or dopant and the remaining diode substrate has a second majority carrier or dopant.
34. The method of claim 1 , wherein the resulting plurality of substantially spherical diodes are substantially spherical light emitting diodes or substantially spherical photovoltaic diodes.
35. The method of claim 1 , further comprising:
depositing a plurality of third conductors over or within the plurality of second conductors.
36. The method of claim 1 , further comprising:
coupling a reflector or a refractor to the base.
37. The method of claim 1 , wherein the base further comprises a Bragg reflector or a reflective plastic or polyester coating.
38. The method of claim 1 , wherein the base further comprises a a plurality of conductive vias extending between a first side and a second side of the base and coupled at the first side to the plurality of first conductors.
39. The method of claim 38 , wherein the plurality of conductive vias comprise a plurality of substantially distributed, substantially spherical conductors.
40. The method of claim 39 , wherein the base further comprises a conductive backplane coupled to the plurality of conductive vias and coupled to or integrated with the second side of the base.
41. The method of claim 1 , further comprising:
depositing a plurality of inorganic dielectric particles suspended with a photoinitiator compound in a second polymer or resin to form a plurality of insulators correspondingly coupled to each of the plurality of substantially spherical diodes.
42. The method of claim 1 , wherein the base comprises at least one material selected from the group consisting of: paper, coated paper, plastic coated paper, embossed paper, fiber paper, cardboard, poster paper, poster board, wood, plastic, rubber, fabric, glass, ceramic, and mixtures thereof.
43. The method of claim 1 , wherein the step of forming the plurality of second conductors further comprises:
depositing an optically transmissive conductor or conductive compound suspended in a polymer, resin or other media.
44. The method of claim 43 , wherein the optically transmissive conductor or conductive compound suspended in a polymer, resin or other media further comprises at least one conductor or conductive compound selected from the group consisting of: carbon nanotubes, antimony tin oxide, indium tin oxide, polyethylene- dioxithiophene, and mixtures thereof.
45. The method of claim 1 , wherein the forming, coupling and converting steps are performed at least in part by or through a printing process.
46. The method of claim 1 , further comprising:
attaching an interface for insertion into a standardized lighting socket.
47. The method of claim 46 , wherein the interface is compatible with an E12, E14, E26, E27, or GU-10 lighting standard.
48. The method of claim 46 , wherein the interface is compatible with a standard Edison-type lighting socket.
49. The method of claim 46 , wherein the interface is compatible with a standard fluorescent-type lighting socket.
50. A method of manufacturing an electronic apparatus, the method comprising:
forming at least one first conductor coupled to a base;
coupling a plurality of substantially spherical substrate particles to the at least one first conductor, wherein each substantially spherical substrate particle of the plurality of substantially spherical substrate particles comprises a semiconductor;
converting the plurality of substantially spherical substrate particles into a plurality of substantially spherical diodes by depositing a dopant material onto the plurality of substantially spherical substrate particles and annealing or alloying the dopant material with the plurality of substantially spherical substrate particles to form a pn junction in each substantially spherical substrate particle, wherein a mean diameter of the plurality of substantially spherical diodes is greater than about twenty (20) microns and less than about forty (40) microns; and
forming at least one second conductor coupled to the plurality of substantially spherical diodes.
51. The method of claim 50 , further comprising:
depositing a plurality of lenses suspended in a first polymer, wherein the plurality of lenses have at least a first index of refraction and wherein the first polymer has at least a second, different index of refraction.
52. The method of claim 51 , wherein each lens of the plurality of lenses is substantially spherical and a ratio of a mean diameter of the plurality of lenses to a mean diameter of the plurality of substantially spherical diodes is substantially about five to one (5:1).
53. The method of claim 51 , wherein each lens of the plurality of lenses is substantially spherical and a ratio of a mean diameter of the plurality of lenses to a mean diameter of the plurality of substantially spherical diodes is between about ten to one (10:1) and two to one (2:1).
54. The method of claim 51 , wherein the plurality of lenses comprise borosilicate glass or polystyrene latex.
55. The method of claim 50 , wherein the plurality of substantially spherical diodes are semiconductor light emitting diodes or photovoltaic diodes.
56. The method of claim 50 , further comprising:
attaching a prefabricated layer to the plurality of substantially spherical diodes, the prefabricated layer comprising a plurality of lenses suspended in a first polymer, wherein the plurality of lenses have at least a first index of refraction and wherein the first polymer has at least a second, different index of refraction.
57. The method of claim 50 , wherein the semiconductor is selected from the group consisting of: gallium nitride, gallium arsenide, silicon, and mixtures thereof.
58. The method of claim 50 , wherein the step of forming the at least one first conductor further comprises:
depositing a first conductive medium.
59. The method of claim 58 , wherein the first conductive medium comprises at least one media selected from the group consisting of: a silver conductive ink, a copper conductive ink, a gold conductive ink, an aluminum conductive ink, a tin conductive ink, a carbon conductive ink, a carbon nanotube polymer, a conductive polymer, and mixtures thereof.
60. The method of claim 58 , wherein the step of depositing a first conductive medium comprises sputtering, coating, vapor depositing or electroplating a metal, a metal alloy, or a combination of metals.
61. The method of claim 60 , wherein the metal, metal alloy, or combination of metals comprise at least one metal selected from the group consisting of:
aluminum, copper, silver, nickel, gold, and mixtures thereof.
62. The method of claim 58 , wherein the step of coupling the plurality of substantially spherical substrate particles to the at least one first conductor further comprises:
depositing the plurality of substantially spherical substrate particles suspended in a reactive carrier medium;
removing the reactive carrier medium; and
curing or re-curing the first conductive medium.
63. The method of claim 50 , wherein the step of coupling the plurality of substantially spherical substrate particles to the at least one first conductor further comprises:
depositing the plurality of substantially spherical substrate particles suspended in an anisotropic conductive medium;
compressing the plurality of substantially spherical substrate particles suspended in the anisotropic conductive medium.
64. The method of claim 50 , wherein the step of coupling the plurality of substantially spherical substrate particles to the at least one first conductor further comprises:
depositing the plurality of substantially spherical substrate particles suspended in a volatile carrier medium; and
evaporating the volatile carrier medium.
65. The method of claim 50 , wherein the step of coupling the plurality of substantially spherical substrate particles to the at least one first conductor further comprises:
depositing within the plurality of channels the plurality of substantially spherical substrate particles suspended in a carrier medium; and
alloying or annealing the plurality of substantially spherical substrate particles within the plurality of channels.
66. The method of claim 50 , wherein the annealing or alloying is laser or thermal annealing or alloying.
67. The method of claim 50 , wherein the dopant material is a substrate liquid or film or a dopant element or compound suspended in a carrier.
68. The method of claim 50 , wherein the dopant material is deposited on a first, upper portion of the plurality of substantially spherical substrate particles to form a substantially hemispherical shell or capped pn junction.
69. The method of claim 68 , wherein about fifteen percent to fifty-five percent of a surface of each diode of substantially all of the plurality of substantially spherical diodes has a penetration layer or region having a first majority carrier or dopant and the remaining diode substrate has a second majority carrier or dopant.
70. The method of claim 50 , wherein the resulting plurality of substantially spherical diodes are substantially spherical light emitting diodes or substantially spherical photovoltaic diodes.
71. The method of claim 50 , further comprising:
depositing at least one third conductor over or within the at least one second conductor.
72. The method of claim 50 , further comprising:
coupling a reflector or a refractor to the base.
73. The method of claim 50 , wherein the base further comprises a Bragg reflector or a reflective plastic or polyester coating.
74. The method of claim 50 , wherein the base further comprises a plurality of conductive vias extending between a first side and a second side of the base and coupled at the first side to the at least one first conductor.
75. The method of claim 74 , wherein the plurality of conductive vias comprise a plurality of substantially distributed, substantially spherical conductors.
76. The method of claim 75 , wherein the base further comprises a conductive backplane coupled to the plurality of conductive vias and coupled to or integrated with the second side of the base.
77. The method of claim 50 , further comprising:
depositing a plurality of inorganic dielectric particles suspended with a photoinitiator compound in a second polymer or resin to form at least one insulator coupled to the plurality of substantially spherical diodes.
78. The method of claim 50 , wherein the base comprises at least one material selected from the group consisting of: paper, coated paper, plastic coated paper, embossed paper, fiber paper, cardboard, poster paper, poster board, wood, plastic, rubber, fabric, glass, ceramic, and mixtures thereof.
79. The method of claim 50 , wherein the step of forming the at least one second conductor further comprises:
depositing an optically transmissive conductor or conductive compound suspended in a polymer, resin or other media.
80. The method of claim 79 , wherein the optically transmissive conductor or conductive compound suspended in a polymer, resin or other media further comprises at least one conductor or conductive compound selected from the group consisting of: carbon nanotubes, antimony tin oxide, indium tin oxide, polyethylene- dioxithiophene, and mixtures thereof.
81. The method of claim 50 , wherein the forming, coupling and converting steps are performed at least in part by or through a printing process.
82. The method of claim 50 , further comprising:
attaching an interface for insertion into a standardized lighting socket.
83. The method of claim 82 , wherein the interface is compatible with an E12, E14, E26, E27, or GU-10 lighting standard.
84. The method of claim 82 , wherein the interface is compatible with a standard Edison-type lighting socket.
85. The method of claim 82 , wherein the interface is compatible with a standard fluorescent-type lighting socket.
86. A method of manufacturing a light emitting electronic apparatus, the method comprising:
forming at least one first conductor coupled to a base;
coupling a plurality of substantially spherical substrate particles to the at least one first conductor;
subsequent to the coupling to the at least one first conductor, converting the plurality of substantially spherical substrate particles into a plurality of substantially spherical light emitting diodes, the plurality of substantially spherical light emitting diodes having a mean diameter greater than about twenty (20) microns and less than about forty (40) microns;
forming at least one second conductor coupled to the plurality of substantially spherical light emitting diodes;
depositing a plurality of substantially spherical lenses suspended in a polymer, the plurality of substantially spherical lenses having at least a first index of refraction and the polymer having at least a second, different index of refraction, wherein a ratio of a mean diameter of the plurality of substantially spherical lenses to a mean diameter of the plurality of substantially spherical light emitting diodes is between about ten to one (10:1) and two to one (2:1); and
attaching an interface for insertion into a standardized lighting socket.
87. A method of manufacturing an electronic apparatus, the method comprising:
forming at least one first conductor coupled to a base;
coupling a plurality of substantially spherical substrate particles to the at least one first conductor;
subsequent to the coupling to the at least one first conductor, converting the plurality of substantially spherical substrate particles into a plurality of substantially spherical diodes, about fifteen percent to fifty-five percent of a surface of each diode of substantially all of the plurality of substantially spherical diodes having a penetration layer or region having a first majority carrier or dopant and the remaining diode substrate having a second majority carrier or dopant;
forming at least one second conductor coupled to the plurality of substantially spherical diodes; and
depositing a plurality of substantially spherical lenses suspended in a polymer, the plurality of substantially spherical lenses having at least a first index of refraction and the polymer having at least a second, different index of refraction.