Light-emitting element and a production method therefor

1. A light emitting device comprising:

a support substrate;

a planar layer over the support substrate;

a current spreading layer over the planar layer;

a bonding layer configured to bond to the planar layer and to bond to the current spreading layer, the bonding layer being between the planar layer and the current spreading layer;

a second conductive semiconductor layer over the current spreading layer;

an active layer over the second conductive semiconductor layer;

a first conductive semiconductor layer over the active layer;

a first electrode layer over the first conductive semiconductor layer;

a second electrode layer over the current spreading layer; and

a concavo-convex structure at a region where the support substrate and the planar layer contact each other,

wherein at least one of the planar layer and the bonding layer includes a transparent material.

2. The light emitting device of claim 1 , further comprising a reflective layer under the support substrate.

3. The light emitting device of claim 1 , further comprising a light extracting structure layer over the first conductive semiconductor layer.

4. The light emitting device of claim 1 , further comprising a superlattice structure layer between the second conductive semiconductor layer and the current spreading layer.

5. The light emitting device of claim 1 , wherein the support substrate is formed on a top surface thereof with the concavo-convex structure.

6. The light emitting device of claim 1 , wherein the bonding layer includes one of SiO 2 , SiN x , Al 2 O 3 , ZnO, ZnS, MgF 2 , and SOG (spin on glass).

7. The light emitting device of claim 1 , wherein the current spreading layer includes one of Ni—Au—O, ITO, and ZnO.

8. The light emitting device of claim 1 , wherein the second electrode directly contacts the current spreading layer.

9. The light emitting device of claim 1 , further comprising an ohmic contact layer between the first conductive semiconductor layer and the first electrode layer.

10. The light emitting device of claim 9 , further comprising a light extracting structure layer between the first conductive semiconductor layer and the ohmic contact layer, the light extracting structure layer having a second concavo-convex structure.

11. The light emitting device of claim 10 , wherein the ohmic contact layer comprises a third concavo-convex structure on the light extracting structure layer.

12. The light emitting diode of claim 9 , wherein the first electrode layer is directly disposed on the ohmic contact layer.