Method for producing an optoelectronic component and optoelectronic component
View Patent ↗A method for producing an optoelectronic component including providing a radiation-emitting device, heating the device and applying a liquid lens material in a beam path of the device, wherein, with crosslinking of the lens material, a lens shaped onto the device is formed.
1. A method for producing an optoelectronic component comprising:
A) providing a radiation-emitting device,
B) heating the device, and
C) applying a liquid lens material on the pre-heated device in a beam path of the device, wherein, with crosslinking of the lens material, a lens shaped onto the device is formed from the liquid lens material.
2. The method of claim 1 , wherein step A) comprises:
A1) arranging a carrier in a cavity of a housing,
A2) arranging a radiation-emitting semiconductor layer sequence on a carrier, and
A3) applying a potting material to the semiconductor layer sequence.
3. The method of claim 1 , wherein, in step B), the radiation-emitting device is heated to a temperature range of 80° C. to 180° C.
4. The method of claim 1 , wherein, in step C), the liquid lens material is at a lower temperature than the radiation-emitting device.
5. The method of claim 4 , wherein, in step C), the lens material is applied dropwise to the radiation-emitting device and a drop is formed on the radiation-emitting device.
6. The method of claim 5 , wherein the drop is fixed by chemical reaction of the lens material with potting material on the radiation-emitting device.
7. The method of claim 1 , wherein the liquid lens material is thermally crosslinkable and is thermally crosslinked by heating of the radiation-emitting device.
8. The method of claim 1 , further comprising in a step C1) following step C), wherein the lens is subjected to a plasma, whereby a non-wetting surface layer of the lens is formed.
9. An optoelectronic component produced according to the method of claim 1 , comprising the radiation-emitting device and a lens comprising a silicone resin shaped onto the device, wherein the radiation-emitting device comprises a housing, a carrier and a semiconductor layer sequence on the carrier arranged in a cavity of a housing and wherein a potting material is arranged over the semiconductor layer sequence in the cavity of the housing.
10. The optoelectronic component of claim 9 , wherein the semiconductor layer sequence comprises an LED chip.