Ceramic metal composite and semiconductor device using the same
A ceramic-metal composite includes a ceramic substrate, an active metal brazing alloy layer, and a metal plate bonded to the ceramic substrate through the active metal brazing alloy layer disposed therebetween. The active metal brazing alloy layer contains a transition metal that is at least one element selected from Group-8 elements specified in the periodic table. According to the above configuration, the following composite and device can be provided: the ceramic-metal composite that exhibits high bonding strength, heat cycle resistance, durability, and reliability even if the ceramic-metal composite is used in a power module and a semiconductor device including the ceramic-metal composite.
1. A ceramic-metal composite comprising:
a ceramic substrate;
an active metal brazing alloy layer containing Ag; Cu; at least one active metal selected from a group consisting of Ti and Zr; and a transition metal that is one of cobalt or palladium; and
a metal plate comprising a copper plate bonded to the ceramic substrate through the active metal brazing alloy layer disposed therebetween,
wherein the content of cobalt or palladium contained in the active metal brazing alloy layer is 0.02% to 0.5% by mass, and
wherein the one of cobalt or palladium is dispersed in the copper plate.
2. The ceramic-metal composite according to claim 1 , wherein the active metal is only Ti.
3. The ceramic-metal composite according to claim 1 , wherein the active metal brazing alloy layer further contains at least one of Sn and In.
4. The ceramic-metal composite according to claim 1 , wherein the active metal brazing alloy layer further contains carbon.
5. A semiconductor device comprising the ceramic-metal composite according to any one of claims 2 to 4 as a ceramic circuit board.
6. The ceramic-metal composite according to claim 1 , wherein the ceramic substrate is silicon nitride substrate or aluminum nitride substrate.
7. The ceramic-metal composite according to claim 1 , wherein bonding strength of the copper plate is 10.2 kN/m or more and 17.2 kN/m or less.