Roll-to-roll non-vacuum deposition of transparent conductive electrodes
Methods and devices are provided for improved photovoltaic devices. Non-vacuum deposition of transparent conductive electrodes in a roll-to-roll manufacturing environment is disclosed. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating layer. By way of nonlimiting example, the web-like layer of conductive material comprises a plurality of carbon nanotubes. In some embodiments, the absorber layer is a group IB-IIIA-VIA absorber layer.
1. A method comprising:
forming a photovoltaic active layer;
depositing a transparent material layer on a sacrificial layer, wherein the transparent material layer is loaded with conductive nanopowder or nanoparticles, wherein the nanopowder or nanoparticle comprises a metal or alloy having a melting temperature about 250 C or less;
sintering the nanopowder or nanoparticles in the transparent material layer on the sacrificial layer; and
depositing the transparent material layer onto the photovoltaic active layer by transferring the transparent material layer from the sacrificial layer to the photovoltaic active layer;
wherein the transparent material layer comprises block co-polymer, and wherein
conductive material is deposited into pores of the block co-polymer.
2. The method of claim 1 wherein the transparent material layer comprises a web-like layer of conductive material comprising of a plurality of metallic nanowires.
3. The method of claim 1 wherein the photovoltaic active layer comprises an absorber layer comprises of a group IB-IIIA-VIA material.
4. The method of claim 1 wherein the transparent material layer further comprises a second metal material having a melting temperature above 150 C, wherein sintering the two materials forms a conductive alloy, solid-solution or line-compound.
5. The method of claim 4 wherein the nanopowder or nanoparticle comprises Ga, Cs, Rb, or Hg, which is combined with high-melting materials selected from the group consisting of Al, Cu, Fe, Ni.
6. The method of claim 5 comprising forming one of the following:
a Al-Ga solid-solution or Cu-Ga solid-solution or line-compound.
7. A method comprising:
forming a photovoltaic active layer;
depositing a transparent material layer on a sacrificial layer, wherein the transparent material layer is loaded with particles comprising a low-melting temperature material selected from the group consisting of: Ga, In, Cs, Rb, Hg, Sn-Bi, Pb-Sn, Zn-Sn, Ag-Sn, and Al-Sn;
sintering the nanopowder or nanoparticles in the transparent material layer on the sacrificial layer; and
depositing the transparent material layer onto the photovoltaic active layer by transferring the transparent material layer from the sacrificial layer to the photovoltaic active layer;
wherein the transparent material layer comprises block co-polymer, and wherein conductive material is deposited into pores of the block co-polymer.
8. A method comprising:
forming a photovoltaic active layer;
forming a transparent material layer on a sacrificial layer, wherein the transparent material layer contains electrically conductive nanopowder or nanoparticles;
sintering the nanopowder or nanoparticles in the transparent material layer on the sacrificial layer; and
depositing the transparent material layer onto the photovoltaic active layer by transferring the transparent material layer from the sacrificial layer to the photovoltaic active layer;
wherein the transparent material layer comprises block co-polymer, and wherein conductive material is deposited into pores of the block co-polymer.
9. The method of claim 8 wherein transferring occurs by an adhesion and release technique.
10. The method of claim 8 wherein the particles comprise particles with melting temperature above 150 C.
11. The method of claim 8 wherein the particles comprise conductive oxide particles.
12. The method of claim 8 wherein the sacrificial layer comprises aluminum foil.
13. The method of claim 8 wherein the transparent material layer includes one or more of the following: conductive oxides, conductive nitrides, conjugated molecules, conjugated polymers, fullerenes, TCO particles, doped semiconductor particles, Ga-AMALGAMS, AZO, GZO, BZO, or ITO.