Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes: a substrate; a semiconductor element installed on the substrate so that a surface formed with an electrode is directed to the substrate; a chip capacitor installed on the substrate; and a conductive material covering a rear surface opposite to the surface of the semiconductor element and joining to one terminal electrode of the chip capacitor.
1. A semiconductor device comprising:
a substrate;
a semiconductor element arranged on the substrate and including a first surface which faces the substrate;
a chip capacitor arranged on the substrate and including a first terminal electrode; and
a conductive material covering a second surface of the semiconductor element opposite to the first surface of the semiconductor element and connecting to the first terminal electrode.
2. The semiconductor device according to claim 1 , further comprising a conductive layer formed in the periphery of the semiconductor element,
wherein the first terminal electrode is connected to the conductive layer, and the conductive material is connected to the conductive layer.
3. The semiconductor device according to claim 1 , wherein the conductive material covers a side surface of the semiconductor element.
4. The semiconductor device according to claim 1 , further comprising a heat radiation plate connected to the conductive material.
5. The semiconductor device according to claim 4 , wherein the chip capacitor includes a second terminal electrode; and
the heat radiation plate includes an inhibiting portion inhibiting the conductive material from being brought into contact with the second terminal electrode.
6. The semiconductor device according to claim 4 , wherein the heat radiation plate includes a protruded surface.
7. The semiconductor device according to claim 6 , wherein a part of the protruded surface is overlapped with the semiconductor element in a plan view.
8. The semiconductor device according to claim 1 , wherein the chip capacitor includes a second terminal electrode which is separated from the first terminal electrode.
9. The semiconductor device according to claim 8 , wherein the second terminal electrode is formed on a surface of the chip capacitor which faces the substrate.
10. The semiconductor device according to claim 8 , wherein the second terminal electrode is separated from the conductive material.
11. The semiconductor device according to claim 8 , wherein the first terminal electrode is nearer from the semiconductor element than the second terminal electrode.
12. The semiconductor device according to claim 8 , wherein the first terminal electrode is supplied with a ground voltage, and
the second terminal electrode is supplied with a power voltage.
13. The semiconductor device according to claim 1 , wherein the semiconductor element includes an electrode formed on the first surface.
14. The semiconductor device according to claim 1 , wherein a part of the conductive material is protruded in a plan view.
15. The semiconductor device according to claim 14 , wherein the part of the conductive material is connected to the first terminal electrode.
16. The semiconductor device according to claim 1 , wherein a plurality of the semiconductor elements are arranged on the substrate.