IP Library Granted Patent US 8,579,513
Granted Patent B2
US 8,579,513 · App. 12/439,356 · Granted Nov 12, 2013

Slide member and bearing utilizing the same

Inventor: Minoru Takao (Yokohama, JP)
Assignees: Kabushiki Kaisha Toshiba; Toshiba Materials Co., Ltd.
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Quick Facts
Patent No.
US 8,579,513
App. No.
12/439,356
Granted
Nov 12, 2013
Kind
B2
Abstract

A sliding member includes a silicon nitride sintered compact containing a rare earth element of 7 to 18 mass % in terms of oxide and at least one element M selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W of 0.1 to 3 mass % in terms of oxide, and having a total content of impurity positive ion elements of 0.3 mass % or less and a thermal conductivity of 60 W/m·K or higher. The silicon nitride sintered compact includes silicon nitride crystal grains and a grain boundary phase, and has a ratio of crystalline compound phases in the grain boundary phase of 20% or more in area ratio, and an average grain size of the crystalline compound phases of 0.5 μm or less. The sliding member is used, for example, as a bearing ball 2.

Claims (20)

1. A sliding member comprising a silicon nitride sintered compact containing, as sintering aids, a rare earth element of 7 to 18 mass % in twins of oxide, aluminum of 0.3 to 4 mass % in terms of oxide, and at least one element M selected from Ti, Zr, Hf, Mg, V, Nb, Ta, Cr, Mo and W of 0.1 to 3 mass % in terms of oxide, and having a total content of Li, Na, K, Ca, Sr, Ba, Fe, Mn and B as impurity positive ion elements of 0.3 mass % or less,

wherein the silicon nitride sintered compact comprises silicon nitride crystal grains and grain boundary phases comprise mainly the sintering aids, the grain boundary phases comprise crystalline compound phases generated by crystallizing a part of the grain boundary phases, and a ratio of the crystalline compound phases in the grain boundary phases is 20% or more in area ratio,

wherein an average grain size of the crystalline compound phases which exist in the grain boundary phases is 0.5 μm or less, and a maximum grain size of the crystalline compound phases which exist in the grain boundary phases is 1 μm or less,

wherein the silicon nitride crystal grains comprise columnar grains having an aspect ratio of 2 or greater, a ratio of the columnar grains in the silicon nitride crystal grains is 50% or more in area ratio, and a maximum length of the columnar grains is 40 μm or less, and

wherein a porosity of the silicon nitride sintered compact is 0.1% or less, and a thermal conductivity of the silicon nitride sintered compact is 60 W/m·K or higher.

2. The sliding member according to claim 1 ,

wherein the average grain size of the crystalline compound phases in the grain boundary phase is 0.3 μm or less.

3. The sliding member according to claim 1 , wherein the silicon nitride sintered compact contains a total amount of the rare earth element and the element M of 20 mass % or less in terms of oxide.

4. The sliding member according to claim 1 , wherein the silicon nitride sintered compact contains a total amount of the rare earth element, the aluminum, and the element M of 20 mass % or less in terms of oxide.

5. The sliding member according to claim 1 , wherein the element M is at least one element selected from Ti, Zr, Hf, Mg, Ta, and Mo.

6. The sliding member according to claim 1 , wherein the element M is two or more elements selected from Ti, Zr, Hf, Mg, Ta, and Mo.

7. The sliding member according to claim 1 , wherein the silicon nitride sintered compact has a Vickers hardness of 1300 to 1500.

8. The sliding member according to claim 1 , wherein the silicon nitride sintered compact has a fracture toughness value of 5.0 MPa·m 1/2 or more.

9. The sliding member according to claim 1 , wherein the silicon nitride sintered compact has a three-point bending strength of 650 MPa or more.

10. The sliding member according to claim 1 , wherein the silicon nitride sintered compact has a crushing strength of 150 N/mm 2 or more.

11. The sliding member according to claim 1 , wherein the sliding member is a rolling element for a bearing.

12. A bearing comprising a rolling element composed of the sliding member according to claim 1 .

13. The bearing according to claim 12 , wherein the silicon nitride sintered compact has a maximum grain size of the crystalline compound phases in the grain boundary phase of 1 μm or less.

14. The bearing according to claim 12 , wherein a porosity of the silicon nitride sintered compact is 0.1% or less.

15. The bearing according to claim 12 , wherein the element M contained in the silicon nitride sintered compact is one element or two or more elements selected from Ti, Zr, Hf, Mg, Ta, and Mo.

Assignments (4)
NUNC PRO TUNC ASSIGNMENT Recorded Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MATERIALS CO. LTD.
Reel/Frame 074940/0511 →
CHANGE OF NAME Recorded Feb 19, 2026
From: TOSHIBA MATERIALS CO. LTD.
To: NITERRA MATERIALS CO., LTD.
Reel/Frame 074941/0803 →
CHANGE OF ADDRESS Recorded Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 074941/0846 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2009
From: TAKAO, MINORU
To: KABUSHIKI KAISHA TOSHIBA; TOSHIBA MATERIALS CO., LTD.
Reel/Frame 022342/0974 →
Priority Claims (1)
JP 2006-248024 · Sep 13, 2006 · national
Continuity (1)
Related Publication 20090238508A1 · Sep 24, 2009