IP Library Granted Patent US 8,580,342
Granted Patent B2
US 8,580,342 · App. 12/714,390 · Granted Nov 12, 2013

Low temperature CNT growth using gas-preheat method

Inventors: Harry C. Malecki (Abingdon, MD); Tushar K. Shah (Columbia, MD)
Assignee: Applied NanoStructured Solutions, LLC
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Quick Facts
Patent No.
US 8,580,342
App. No.
12/714,390
Filed
Feb 26, 2010
Granted
Nov 12, 2013
Kind
B2
Art Unit
1715
USPC
427/249.1
Abstract

A method for synthesizing carbon nanotubes (CNT) comprises the steps of providing a growth chamber, the growth chamber being heated to a first temperature sufficiently high to facilitate a growth of carbon nanotubes; and passing a substrate through the growth chamber; and introducing a feed gas into the growth chamber pre-heated to a second temperature sufficient to dissociate at least some of the feed gas into at least free carbon radicals to thereby initiate formation of carbon nanotubes onto the substrate.

Claims (18)

1. A method comprising the steps of:

providing a growth chamber, the growth chamber being heated to a first temperature sufficiently high to facilitate a growth of carbon nanotubes (CNTs);

passing a substrate through the growth chamber;

heating an inert gas to a temperature exceeding a second temperture; and

mixing a feed gas comprising a carbon with the heated inert gas to create a pre-heated mixture of the feed gas and the inert gas that has a temperature of at least the second temperature, wherein the second temperature is sufficient to dissociate at least some of the feed gas into free carbon radicals; and

introducing the pre-heated mixture of feed gas and inert gas into the growth chamber wherein the free carbon radicals initiate formation of CNTs on the substrate.

2. The method of claim 1 wherein the second temperature is higher than the first temperature.

3. The method of claim 1 , further comprising controlling the first temperature in a range of from about 450° C. to about 650° C.

4. The method of claim 1 , further comprising controlling the second temperature in a range of from about 550° C. to about 1000° C.

5. The method of claim 1 wherein the substrate is comprises at least one material selected from the group consisting of: a carbon fiber, a graphite fiber, a cellulosic fiber, a glass fiber, a metal fiber, a ceramic fiber, an aramid fiber, and any combination thereof.

6. The method of claim 1 wherein the substrate is coated with at least one material selected from the group consisting of: a catalyst, and a sizing.

7. The method of claim 1 , further comprising diffusing the pre-heated mixture of feed gas and inert gas into the growth chamber.

8. The method of claim 1 , wherein the second temperature is within about 40% of the first temperature.

9. The method of claim 1 , wherein:

the substrate comprises a substrate of spoolable dimensions;

the growth chamber comprises an inlet and an outlet; and

the step of passing a substrate through the growth chamber comprises the substrate of spoolable dimensions entering inlet and exiting the outlet continuously.

10. The method of claim 9 , wherein the growth chamber comprises an open-air, continuous-operation, flow-through reactor.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 6, 2010
From: LOCKHEED MARTIN CORPORATION
To: APPLIED NANOSTRUCTURED SOLUTIONS, LLC
Reel/Frame 024349/0133 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 12, 2010
From: MALECKI, HARRY C.; SHAH, TUSHAR K.
To: LOCKHEED MARTIN CORPORATION
Reel/Frame 024219/0409 →
Continuity (2)
Provisional Application 61155935 · Feb 27, 2009
Related Publication 20100221424A1 · Sep 2, 2010