IP Library Granted Patent US 8,581,230
Granted Patent B2
US 8,581,230 · App. 12/977,195 · Granted Nov 12, 2013

Light-emitting device having enhanced luminescence by using surface plasmon resonance and method of fabricating the same

Inventors: Tae-ho Kim (Suwon-si, KR); Chang-won Lee (Seoul, KR); Byoung-lyong Choi (Seoul, KR); Kyung-sang Cho (Gwacheon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,581,230
App. No.
12/977,195
Granted
Nov 12, 2013
Kind
B2
Abstract

A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.

Claims (23)

1. A light-emitting device comprising:

a substrate;

a first electrode on the substrate;

an emitting layer on the first electrode, and comprising a plurality of quantum dots;

an electron transport layer on the emitting layer;

a plurality of nanoplasmonic particles dispersed in the electron transport layer, each nanoplasmonic particle having a nano-disc shape; and

a second electrode on the electron transport layer,

wherein

the nano-disc has a thickness between about 5 nanometers and about 50 nanometers and a diameter between about 10 nanometers and about 100 nanometers, and

an average distance between nanoplasmonic particles is greater than 0 nanometer and less than 10 nanometers.

2. The light-emitting device of claim 1 , further comprising:

a hole injection layer between the first electrode and the emitting layer and on the first electrode, and

a hole transport layer between the hole injection layer and the emitting layer.

3. The light-emitting device of claim 1 , wherein the plurality of nanoplasmonic particles cause surface plasmon resonance due to light emitted from the emitting layer.

4. The light-emitting device of claim 3 , wherein a distance between the plurality of nanoplasmonic particles and the emitting layer is within an effective distance of an electromagnetic wave which is generated by the surface plasmon resonance.

5. The light-emitting device of claim 4 , wherein the distance between the plurality of nanoplasmonic particles and the emitting layer is between about 10 nanometers and about 12 nanometers.

6. The light-emitting device of claim 1 , wherein a size of each of the plurality of nanoplasmonic particles is within ±15% of an average size of the plurality of nanoplasmonic particles.

7. The light-emitting device of claim 1 , wherein the plurality of nanoplasmonic particles include a metal material selected from the group consisting of Ag, Au, Cu, Pb, In, Hg, Sn, Cd, and combinations thereof.

8. The light-emitting device of claim 1 , wherein the electron transport layer includes an inorganic oxide semiconductor material or an organic material.

9. The light-emitting device of claim 8 , wherein the electron transport layer includes titanium oxide or ionomer resin.

10. The light-emitting device of claim 8 , wherein the electron transport layer has a thickness between about 40 nanometers and about 60 nanometers.

11. The light-emitting device of claim 1 , wherein the substrate is a transparent substrate, the first electrode is a transparent electrode, and the second electrode is a reflective electrode.

12. The light-emitting device of claim 1 , wherein the plurality of nanoplasmonic particles are arrayed according to a lattice-structure pattern.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2010
From: KIM, TAE-HO; LEE, CHANG-WON; CHOI, BYOUNG-LYONG; CHO, KYUNG-SANG
To: SAMSUNG ELECTRONICS CO., LTD
Reel/Frame 025566/0816 →
Priority Claims (1)
KR 10-2010-0075983 · Aug 6, 2010 · national
Continuity (1)
Related Publication 20120032138A1 · Feb 9, 2012