Chip comprising an integrated circuit, fabrication method and method for locally rendering a carbonic layer conductive

1. A chip comprising:

an integrated circuit; and

a carbonic layer, wherein the carbonic layer comprises a graphite-like carbon, wherein a lateral conducting path through the graphite-like carbon electrically connects two circuit elements of the integrated circuit, and wherein the carbonic layer comprises an isolating portion that comprises amorphous carbon surrounding and abutting the graphite-like carbon.

2. The chip of claim 1 , wherein the graphite-like carbon and amorphous carbon occupy laterally distinct areas of the carbonic layer and both extend over a whole thickness of the carbonic layer.

3. The chip of claim 1 , wherein the graphite-like carbon extends down to a depth of the carbonic layer smaller than the thickness of the carbonic layer so as to be embedded in the amorphous carbon.

4. The chip of claim 1 , wherein the thickness of the carbonic layer is laterally constant.

5. The chip of claim 1 , wherein the two circuit elements comprise logic circuits.

6. The chip of claim 1 , wherein a first one of the two circuit elements is a transistor and a second one of the two circuit elements is an element selected from the group consisting of a contact pad, a transistor, a capacitor and a diode.

7. A chip comprising:

a substrate;

an integrated circuit; and

a carbonic layer over the substrate;

wherein the carbonic layer comprises an isolating portion comprising amorphous carbon and a conducting portion comprising graphite-like carbon; and

wherein a lateral conducting path through the graphite-like carbon electrically connects two circuit elements of the integrated circuit.

8. A method of making a chip, the method comprising:

forming a carbonic layer over an integrated circuit, the carbonic layer comprising amorphous carbon; and

directing a laser beam onto the carbonic layer so as to convert the amorphous carbon of the carbonic layer into graphite-like carbon;

wherein after directing the laser beam the chip comprises the integrated circuit and the carbonic layer, wherein the carbonic layer comprises the graphite-like carbon, wherein a lateral conducting path through the graphite-like carbon electrically connects two circuit elements of the integrated circuit, and wherein the carbonic layer comprises an isolating portion that comprises amorphous carbon surrounding and abutting the graphite-like carbon.

9. The method of claim 8 , wherein directing the laser beam onto the carbonic layer is performed so that the laser beam travels through a further layer before impinging onto the carbonic isolating layer.

10. A method for fabricating a chip comprising an integrated circuit and a carbonic layer, the method comprising:

heating the carbonic layer so as to form a conducting portion of the layer, wherein a lateral path through the conducting portion connects two circuit elements of the integrated circuit;

wherein after heating the carbonic layer the chip comprises the integrated circuit and the carbonic layer, wherein the carbonic layer comprises graphite-like carbon, wherein the lateral conducting path through the graphite-like carbon electrically connects the two circuit elements of the integrated circuit, and wherein the carbonic layer comprises an isolating portion that comprises amorphous carbon surrounding and abutting the graphite-like carbon.

11. The method of claim 10 , further comprising providing the carbonic layer on a substrate.

12. The method of claim 11 , wherein providing the carbonic layer is performed such that the carbonic layer comprises amorphous carbon.

13. The method of claim 10 , wherein heating the carbonic layer comprises locally heating the carbonic layer.

14. The method of claim 10 , wherein heating the carbonic layer comprises using a laser.

15. The method of claim 10 , wherein heating the carbonic layer comprises using an oven.

16. The method of claim 12 , wherein the heating is performed such that amorphous carbon is converted into graphite-like carbon surrounded by amorphous carbon.

17. The method of claim 16 , wherein the heating is performed such that amorphous carbon and graphite-like carbon occupy laterally distinct areas of the carbonic layer and both extend over a whole thickness of the carbonic layer.

18. The method of claim 16 , wherein the heating is performed such that the graphite-like carbon extends down to a depth of the carbonic layer smaller than a thickness of the carbonic layer and is embedded in the amorphous carbon.

19. The method of claim 17 , wherein the thickness of the carbonic layer is laterally constant.

20. The method of claim 13 , wherein locally heating is performed such that the lateral path connects the two circuit elements, wherein a first one of the two circuit elements is a transistor or a logical circuit and a second one of the two circuit elements is one of a group consisting of a contact pad, a logical circuit, a transistor, a capacitor and a diode.