Solution deposition assembly
Methods and devices are provided for improved sputtering systems. In one embodiment of the present invention, a deposition system for use with a substrate, the system comprising a solution deposition apparatus; at heating chamber; and at least assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to 10 mm.
1. A deposition system for use with a substrate, the system comprising:
a solution deposition apparatus;
at least one heating chamber;
at least one assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to 10 mm; and
a plurality of seals that define a volume where fluid can be held over the substrate, wherein the seals move with the substrate during at least a portion of substrate processing.
2. The system of claim 1 wherein the substrate comprises of a flexible material.
3. The system of claim 1 wherein the system includes multiple zones at different temperatures.
4. The system of claim 3 wherein certain zones have enclosed atmospheres.
5. The system of claim 1 wherein the seals move at the same rate as the substrate.
6. The system of claim 1 wherein the system is configured such that the substrate will be at a temperature less than a temperature of the solution or a dispersion to be deposited on the substrate.
7. The system of claim 1 wherein both the solution and the substrate are at substantially the same temperature.
8. The system of claim 1 wherein neither the solution or the substrate are heated and both are at ambient temperatures.
9. The system of claim 1 wherein the substrate is heated from ambient to about 60-90 C but the solution is at a still higher temperature.
10. The system of claim 1 wherein the substrate comprises of a metal foil.
11. The system of claim 1 wherein the solution comprises a precursor for forming a junction partner for a group IB-IIIA-VIA absorber layer.
12. The system of claim 1 wherein the solution comprises a precursor for forming a Group IIB-VIA junction partner.
13. The system of claim 1 wherein the solution comprises a precursor for forming a junction partner selected from the group consisting of: cadmium sulfide (CdS), zinc sulfide (ZnS), zinc hydroxide, zinc selenide (ZnSe).
14. The system of claim 1 wherein the solution comprises of a Group IIB ionic species is obtained from an aqueous solution of one or more of the following: sulfate, acetate, bromide, fluoride, chloride, iodide, hydroxide, nitrate, oxalate, citrate, phosphate, tungstate, or hydrates of the Group IIB species.
15. The system of claim 1 wherein the solution comprises of a Group VIA ionic species is obtained from an aqueous solution of one or more of the following: oxides, halides, sulfates, nitrates, or ureates of the Group VIA species.
16. The system of claim 1 wherein the solution has a pH of from about 9 to about 14.
17. The system of claim 1 wherein the solution has a pH of from about 11 to about 12.
18. The system of claim 1 wherein the assembly for holding solution is at least partially contained in the heating chamber.
19. A deposition system for use with a substrate, the system comprising:
a solution deposition apparatus;
at least one heating chamber;
at least one assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to 10 mm; and
a plurality of seals that define a volume where fluid can be held over the substrate, wherein the seals move at the same speed as the substrate.
20. A deposition system for use with a substrate, the system comprising:
a solution deposition apparatus;
at least one heating chamber;
at least one assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to 10 mm; and
a movable seal system that defines a volume over which fluid can be held over the substrate.