Method of manufacturing semiconductor device
A silicon carbide substrate having a surface is prepared. An impurity region is formed by implanting ions from the surface into the silicon carbide substrate. Annealing for activating the impurity region is performed. The annealing includes the step of applying first laser light having a first wavelength to the surface of the silicon carbide substrate, and the step of applying second laser light having a second wavelength to the surface of the silicon carbide substrate. The silicon carbide substrate has first and second extinction coefficients at the first and second wavelengths, respectively. A ratio of the first extinction coefficient to the first wavelength is higher than 5×10 5 /m. A ratio of the second extinction coefficient to the second wavelength is lower than 5×10 5 /m. Consequently, damage to the surface of the silicon carbide substrate during laser annealing can be reduced.
1. A method of manufacturing a semiconductor device, comprising the steps of:
preparing a silicon carbide substrate having a surface;
forming an impurity region by implanting ions from said surface into said silicon carbide substrate; and
performing annealing for activating said impurity region,
said step of performing annealing including the step of applying first laser light having a first wavelength to said surface of said silicon carbide substrate, and the step of applying second laser light having a second wavelength to said surface of said silicon carbide substrate, and
said silicon carbide substrate having first and second extinction coefficients at said first and second wavelengths, respectively, a ratio of said first extinction coefficient to said first wavelength being higher than 5×10 5 /m, and a ratio of said second extinction coefficient to said second wavelength being lower than 5×10 5 /m.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein
said step of forming an impurity region includes the steps of
forming a first impurity layer having a first impurity concentration and reaching a first depth with reference to said surface of said silicon carbide substrate, and
forming a second impurity layer having a second impurity concentration and reaching a second depth with reference to said surface of said silicon carbide substrate, and
said second depth is smaller than said first depth, and said second impurity concentration is higher than said first impurity concentration.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein
said step of applying first laser light is a step of applying said first laser light only to a first region which is a portion of said surface of said silicon carbide substrate.
4. The method of manufacturing a semiconductor device according to claim 3 , wherein
said step of applying second laser light is a step of applying said second laser light to a second region of said surface of said silicon carbide substrate, said first region being smaller than said second region.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein
one of said step of applying first laser light and said step of applying second laser light is performed after the other.
6. The method of manufacturing a semiconductor device according to claim 1 , wherein
said step of applying first laser light and said step of applying second laser light are simultaneously performed.
7. The method of manufacturing a semiconductor device according to claim 1 , wherein
said step of performing annealing includes the step of heating said silicon carbide substrate by a heater.
8. The method of manufacturing a semiconductor device according to claim 1 , wherein
said step of performing annealing is carried out in any of an inert gas atmosphere and an atmosphere under a reduced pressure from atmospheric pressure.
9. The method of manufacturing a semiconductor device according to claim 1 , wherein
photon energy of each of said first and second laser lights is higher than band gap energy of said silicon carbide substrate.