Extremely low resistance films and methods for modifying and creating same
Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
1. A method for improving operational characteristics of an ELR film, the ELR film comprising an ELR material having a crystalline structure, the method comprising:
forming an appropriate surface on or within the ELR film, wherein the forming comprises layering the ELR material onto a substrate in a manner that orients a particular axis of the crystalline structure of the ELR material along a principal axis of the substrate, wherein the particular axis is a line within the c-plane of the crystalline structure of the ELR material;
layering a modifying material onto the appropriate surface of the ELR film to create a modified ELR film, wherein the modified ELR film has improved operational characteristics over those of the ELR film without the modifying material.
2. The method of claim 1 , wherein layering a modifying material onto an appropriate surface of the ELR film comprises depositing the modifying material onto the appropriate surface of the ELR material.
3. The method of claim 1 , wherein layering a modifying material onto an appropriate surface of the ELR film comprises layering the modifying material onto a face of the ELR material that is not substantially parallel to a c-plane of the crystalline structure of the ELR material.
4. The method of claim 3 , wherein layering a modifying material onto an appropriate surface of the ELR film comprises layering the modifying material onto a face of the ELR material that is parallel to an ab-plane of the crystalline structure of the ELR material.
5. The method of claim 4 , wherein layering a modifying material onto appropriate surface of the ELR film comprises layering the modifying material onto a face of the ELR material that is parallel to an a-plane or a b-plane of the crystalline structure of the ELR material.
6. The method of claim 1 , wherein layering a modifying material onto an appropriate surface of the ELR film comprises layering chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, or selenium onto the appropriate surface of the ELR film.
7. The method of claim 1 , wherein the particular axis is the a-axis or the b-axis.
8. The method of claim 7 , wherein layering the ELR material onto a substrate comprises layering the ELR material onto MgO, SrTiO 3 , LaSrGaO 4 or combinations thereof.
9. The method of claim 1 , wherein the ELR material comprises a superconducting material.
10. The method of claim 9 , wherein the superconducting material comprises a mixed-valence copper-oxide perovskite.
11. The method of claim 9 , wherein the superconducting material comprises an iron pnictide or magnesium diboride.
12. A method for improving an operational characteristic of an ELR film, the ELR film having a principal axis longer than either of its other two axes, the ELR film having a primary surface having an area larger than either of its other orthogonal faces, the ELR film comprising an ELR material having a crystalline structure, the method comprising:
creating at least one groove in the primary surface of the ELR film, thereby exposing a face of the ELR material, the exposed face being a face parallel to an ab-plane of the crystalline structure of the ELR material; and
depositing a modifying material onto the exposed face.
13. The method of claim 12 , wherein creating at least one groove in the primary surface of the ELR film comprises creating at least one groove having a depth substantially equal to a thickness of the ELR material.
14. The method of claim 12 , wherein creating at least one groove in the primary surface of the ELR film comprises creating at least one groove having a depth less than a thickness of the ELR material.
15. The method of claim 12 , wherein depositing a modifying material onto the exposed face comprises depositing a single unit layer of the modifying material onto the exposed face.
16. The method of claim 12 , wherein depositing a modifying material onto the exposed face comprises depositing two or more unit layers of the modifying material onto the exposed face.
17. The method of claim 12 , wherein the width of the at least one groove is greater than 10 nm.
18. The method of claim 12 , wherein creating at least one groove in the primary surface of the ELR film comprises creating at least one groove in the primary surface of the film that is substantially in the direction of the principal axis of the ELR film.
19. A method for improving operational characteristics of an ELR film, the ELR film comprising an ELR material having a crystalline structure, the method comprising:
exposing an appropriate surface on or within the ELR film, wherein the exposing comprises etching a primary surface of the ELR film to increase a surface area of the primary surface;
layering a modifying material onto the appropriate surface of the ELR film to create a modified ELR film, wherein the modified ELR film has improved operational characteristics over those of the ELR film without the modifying material.
20. The method of claim 19 , wherein layering a modifying material onto an appropriate surface of the ELR film comprises depositing the modifying material onto the appropriate surface of the ELR material.
21. The method of claim 19 , wherein layering a modifying material onto an appropriate surface of the ELR film comprises layering the modifying material onto a face of the ELR material that is not substantially parallel to a c-plane of the crystalline structure of the ELR material.
22. The method of claim 21 , wherein layering a modifying material onto an appropriate surface of the ELR film comprises layering the modifying material onto a face of the ELR material that is parallel to an ab-plane of the crystalline structure of the ELR material.
23. The method of claim 22 , wherein layering a modifying material onto appropriate surface of the ELR film comprises layering the modifying material onto a face of the ELR material that is parallel to an a-plane or a b-plane of the crystalline structure of the ELR material.
24. The method of claim 19 , wherein layering a modifying material onto an appropriate surface of the ELR film comprises layering chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, or selenium onto the appropriate surface of the ELR film.
25. The method of claim 19 , further comprising layering the ELR material onto a substrate comprised of MgO, SrTiO 3 , LaSrGaO 4 or combinations thereof.
26. The method of claim 19 , wherein etching comprises creating a pattern in a primary surface of the ELR film thereby exposing one or more appropriate surfaces of the ELR film.
27. The method of claim 26 , wherein the creating comprises inscribing a groove in the primary surface of the ELR film.
28. The method of claim 27 , wherein layering a modifying material onto an appropriate surface of the ELR film comprises depositing the modifying material into the groove.
29. The method of claim 19 , wherein the ELR material comprises a superconducting material.
30. The method of claim 29 , wherein the superconducting material comprises a mixed-valence copper-oxide perovskite.
31. The method of claim 29 , wherein the superconducting material comprises an iron pnictide or magnesium diboride.