IP Library Granted Patent US 8,659,971
Granted Patent B2
US 8,659,971 · App. 13/541,600 · Granted Feb 25, 2014

Word-line voltage regulating circuit and single power supply memory

Inventors: Lei Wang (Shanghai, CN); Yi Xu (Shanghai, CN); Xiaojin Guan (Shanghai, CN)
Assignee: Grace Semiconductor Manufacturing Corporation
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Quick Facts
Patent No.
US 8,659,971
App. No.
13/541,600
Granted
Feb 25, 2014
Kind
B2
Abstract

A word-line voltage regulating circuit and a single power supply memory are disclosed. The word-line voltage regulating circuit includes: a charge pump for raising an input voltage to a desired value and outputting the raised input voltage as an output voltage; a controller for inputting a refresh signal to the charge pump according to the output voltage of the charge pump; and a comparator for inputting a feedback signal to the charge pump according to a comparison result between the output voltage of the charge pump and a reference voltage. The charge pump works under control of the refresh signal when the memory is in an active mode, and works under control of the feedback signal when the memory is in a standby mode. The word-line voltage regulating circuit can effectively reduce the power consumption and can meet the requirement for proportional scale-down of integrated circuits.

Claims (22)

1. A word-line voltage regulating circuit for single power supply memory, comprising:

a charge pump for raising an input voltage to a desired value and outputting the raised input voltage as an output voltage;

a controller for inputting a refresh signal to the charge pump according to the output voltage of the charge pump; and

a comparator for inputting a feedback signal to the charge pump according to a comparison result between the output voltage of the charge pump and a reference voltage,

wherein, a read control signal controls the controller and the comparator, so as to deactivate the controller and activate the comparator when the single power supply memory is in an active mode, and to activate the controller and deactivate the comparator when the single power supply memory is in a standby mode,

and wherein the charge pump works under control of the refresh signal in the active mode, and works under control of the feedback signal in the standby mode.

2. The word-line voltage regulating circuit for single power supply memory according to claim 1 , further comprising:

a voltage clamper and a voltage supply circuit, the voltage clamper comprising a first MOS transistor and a second MOS transistor, the voltage supply circuit supplying a first gate voltage to a gate electrode of the first MOS transistor in the standby mode and supplying a second gate voltage to a gate electrode of the second MOS transistor in the active mode, wherein a voltage difference between the first gate voltage and the second gate voltage is equal to a threshold voltage of the MOS transistors.

3. The word-line voltage regulating circuit for single power supply memory according to claim 2 , wherein the voltage supply circuit comprises a regulator, the regulator outputting the first gate voltage and the second gate voltage according to the output voltage of the charge pump, the reference voltage and the refresh signal of the controller.

4. The word-line voltage regulating circuit for single power supply memory according to claim 3 , wherein the regulator comprises an operational amplifier, an output P-type transistor, and a first resistor and a second resistor connected in serial, the operational amplifier having an output terminal connected to a gate electrode of the output P-type transistor, a first input terminal connected to the reference voltage, and a second input terminal connected between the first resistor and the second resistor.

5. A single power supply memory employing the word-line voltage regulating circuit according to claim 4 .

6. The single power supply memory according to claim 5 , wherein the single power supply memory is a single power supply flash memory.

7. A single power supply memory employing the word-line voltage regulating circuit according to claim 3 .

8. The single power supply memory according to claim 7 , wherein the single power supply memory is a single power supply flash memory.

9. A single power supply memory employing the word-line voltage regulating circuit according to claim 2 .

10. The single power supply memory according to claim 9 , wherein the single power supply memory is a single power supply flash memory.

11. The word-line voltage regulating circuit for single power supply memory according to claim 1 , further comprising:

a voltage divider connected between the charge pump and the comparator, the voltage divider dividing the output voltage of the charge pump and supplying a divided output voltage to the comparator.

12. A single power supply memory employing the word-line voltage regulating circuit according to claim 11 .

13. The single power supply memory according to claim 12 , wherein the single power supply memory is a single power supply flash memory.

14. A single power supply memory employing the word-line voltage regulating circuit according to claim 1 .

15. The single power supply memory according to claim 14 , wherein the single power supply memory is a single power supply flash memory.

Assignments (2)
MERGER Recorded May 13, 2014
From: GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
To: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 032885/0010 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 3, 2012
From: WANG, LEI; XU, YI; GUAN, XIAOJIN
To: GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 028486/0905 →
Priority Claims (1)
CN 2011 1 0187079 · Jul 5, 2011 · national
Continuity (1)
Related Publication 20130010536A1 · Jan 10, 2013