Nitride semiconductor light emitting device and fabrication method thereof
Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
1. A light emitting device comprising:
a first type semiconductor layer;
an active layer on the first type semiconductor layer; and
a second type semiconductor layer on the active layer,
wherein the first type semiconductor layer comprises at least two semiconductor layers,
wherein the second type semiconductor layer has a doping profile including a p-type dopant and comprising a plurality of peaks,
wherein the second type semiconductor layer comprises a plurality of semiconductor layers,
wherein the plurality of semiconductor layers comprises a first p-type semiconductor layer and a second p-type semiconductor layer,
wherein the second p-type semiconductor layer includes GaN, and
wherein the plurality of peaks are formed in the second p-type semiconductor layer.
2. The light emitting device according to claim 1 , wherein the first p-type semiconductor layer includes GaN.
3. The light emitting device according to claim 1 , wherein the first p-type semiconductor layer includes AlGaN.
4. The light emitting device according to claim 1 , wherein the first p-type semiconductor layer is in a range of 10 Å-300 Å.
5. The light emitting device according to claim 1 , wherein the first p-type semiconductor layer includes InGaN.
6. The light emitting device according to claim 5 wherein the second p-type semiconductor layer includes one selected from the group of consisting of Mg, Mg-Al and Mg-Al-In.
7. The light emitting device according to claim 1 , wherein in the doping profile, a concentration of the p-type dopant non-linearly decreases from a center of a thickness of the first p-type semiconductor layer to a center of a thickness of the second p-type semiconductor layer.
8. The light emitting device according to claim 1 , wherein the p-type dopant includes Mg.
9. A light emitting device comprising:
a first type semiconductor layer;
an active layer on the first type semiconductor layer; and
a second type semiconductor layer on the active layer,
wherein the second type semiconductor layer includes a p-type dopant,
wherein the second type semiconductor layer has a doping profile comprising a plurality of peaks,
wherein the second type semiconductor layer comprises a plurality of semiconductor layers,
wherein the plurality of semiconductor layers comprises a p-type GaN layer and a p-type AlGaN layer, and
wherein the plurality of peaks are formed in the p-type GaN layer.
10. The light emitting device according to claim 9 , wherein the p-type AlGaN layer is in a range of 5 Å-200 Å.
11. The light emitting device according to claim 9 , wherein the active layer includes a InGaN layer.
12. The light emitting device according to claim 9 , wherein the active layer includes an InGaN well layer and an InGaN barrier layer.
13. A light emitting device comprising:
a substrate;
a buffer layer on the substrate;
an n-type semiconductor layer on the buffer layer;
an active layer on the n-type semiconductor layer;
a p-type semiconductor layer on the active layer; and
an electrode layer on the p-type semiconductor layer,
wherein the p-type semiconductor layer includes a p-type dopant,
wherein the p-type semiconductor layer has a doping profile comprising a plurality of peaks.
wherein the p-type semiconductor layer comprises a plurality of semiconductor layers.
wherein the plurality of semiconductor layers comprises a GaN layer and an AlGaN layer,
wherein the n-type semiconductor layer includes a super lattice structure having at least two layers, and
wherein the active layer has an InGaN layer, and
wherein the p-type dopant of the GaN layer is more heavily doped than the p-type dopant of the AlGaN layer.
14. The light emitting device according to claim 13 , wherein the AlGaN layer is disposed between the active layer and the GaN layer of the p-type semiconductor layer.
15. The light emitting device according to claim 13 , wherein the electrode layer has an ITO material.
16. The light emitting device according to claim 13 , wherein the AlGaN layer is in a range of 10 Å-300 Å.