Method for producing solid electrolyte capacitors

1. A process for producing an electrolyte capacitor, at least comprising, that

a) applying a dispersion A) onto a porous body, at least comprising

a porous electrode body of an electrode material and a dielectric which covers the surface of this electrode material,

wherein said dispersion A) comprises at least particles B) of an electrically conductive polythiophene, which is optionally substituted and a dispersant D),

b) and forming a solid electrolyte which partly or fully covers the dielectric surface by at least partly removing the dispersant D),

wherein for the dispersion A), the integral of the viscosity, which is represented as a function of the solids content, in the integration range from 0.4% solids to 5% solids, is less than 2500 mPas %, wherein the viscosity is determined with a rheometer in mPas at 20° C. and a shear rate of 100 s −1 , and the solids content is determined in percent.

2. The process according to claim 1 , wherein the particles B) of dispersion A) in the dry state have a specific electrical conductivity of greater than 100 S/cm.

3. The process according to claim 1 , wherein the particles B) of the conductive polymer in dispersion A) have a mean diameter of 1-100 nm.

4. The process according to claim 1 , wherein the dispersion A) has a metals content of less than 5000 mg/kg.

5. The process according to claim 1 , wherein the particles B) in dispersion A) comprise at least one polythiophene with repeat units of the general formula (I) or of the general formula (II) or of the general formula (X) or repeat units of the formulae (I) and (II) or repeat units of the formulae (I) and (X) or repeat units of the formulae (II) and (X) or repeat units of the formulae (I), (II) and (X)

in which

A is an optionally substituted C 1 -C 5 -alkylene radical,

R is independently of each other H, a linear or branched, optionally substituted C 1 -C 18 -alkyl radical, an optionally substituted C 5 -C 12 -cycloalkyl radical, an optionally substituted C 6 -C 14 -aryl radical, an optionally substituted C 1 -C 4 -aralkyl radical, an optionally substituted C 1 -C 4 -hydroxyalkyl radical or a hydroxyl radical,

x is an integer of 0 to 8 and,

in the case that a plurality of R radicals is bonded to A, they may be the same or different.

6. The process according to claim 1 , wherein the polythiophene in dispersion A) is poly(3,4-ethylenedioxythiophene).

7. The process according to claim 1 , wherein the particles B) additionally comprise at least one polymeric anion.

8. The process according to claim 7 , wherein the polymeric anion is an anion of a polymeric carboxylic or sulphonic acid.

9. The process according to claim 1 , wherein the dispersion A) comprises, as the dispersant D), organic solvent, water or mixtures of organic solvent and water.

10. The process according to claim 1 , wherein dispersion A) additionally comprises crosslinkers and/or surface-active substances and/or further additives.

11. The process according to claim 1 , wherein the electrode material of the electrode body is a valve metal or a compound with electrical properties comparable to a valve metal.

12. The process according to claim 1 , wherein for the dispersion A), the integral of the viscosity, which is represented as a function of the solids content, in the integration range from 0.4% solids to 5% solids, is less than 2000 mPas %.

13. The process according to claim 1 , wherein for the dispersion A), the integral of the viscosity, which is represented as a function of the solids content, in the integration range from 0.4% solids to 5% solids, is less than 1500 mPas %.

14. The process according to claim 1 , wherein for the dispersion A), the integral of the viscosity, which is represented as a function of the solids content, in the integration range from 0.4% solids to 5% solids, is less than 1100 mPas %.

15. The process according to claim 1 , wherein for the dispersion A), the integral of the viscosity, which is represented as a function of the solids content, in the integration range from 0.4% solids to 5% solids, is less than 600 mPas %.