Three dimensional sensors, systems, and associated methods
3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.
1. A monolithic 3D sensor capable of detecting infrared and visible light, comprising:
a semiconductor substrate having a device surface;
at least one visible light photodiode formed at the device surface;
at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode; and
a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation.
2. The sensor of claim 1 , wherein the quantum efficiency enhanced infrared light region is a textured region located at the device surface.
3. The sensor of claim 1 , wherein the quantum efficiency enhanced infrared light region is a textured region located on a side of the semiconductor substrate opposite the device surface.
4. The sensor of claim 1 , wherein the quantum efficiency enhanced infrared light region has surface structures formed using a pulsed laser with a pulse duration of from about 1 femtosecond to about 500 picoseconds.
5. The sensor of claim 4 , wherein the surface structures have an average height of from about 5 nm to about 500 μm.
6. The sensor of claim 1 , wherein the at least one visible light photodiode includes at least one red light-sensitive photodiode, at least one blue light-sensitive photodiode, at least one green light-sensitive photodiode, and at least one 3D photodiode.
7. The sensor of claim 1 , wherein the 3D photodiode is operable to detect infrared light having a wavelength of greater than about 800 nm.
8. The sensor of claim 1 , further comprising an infrared narrow bandpass filter optically coupled to the 3D photodiode and positioned to filter electromagnetic radiation impinging on the 3D photodiode.
9. The sensor of claim 1 , further comprising an infrared cut filter optically coupled to the at least one visible light diode and positioned to filter infrared electromagnetic radiation impinging on the at least one visible light photodiode.
10. The sensor of claim 1 , wherein the 3D photodiode further includes circuitry for capturing signals generated by the 3D photodiode in response to detection of a pulse of infrared light from an infrared light source.
11. The sensor of claim 1 , wherein the 3D photodiode further includes circuitry for calculating time of flight information.
12. The sensor of claim 1 , further comprising circuitry for synchronizing light capture of the 3D photodiode with an infrared light source.
13. The sensor of claim 1 , further comprising readout circuitry functionally coupled to the at least one visible light photodiode and the at least one 3D photodiode operable to function in global shutter mode.
14. The sensor of claim 1 , wherein the sensor is configured as a backside illuminated sensor.
15. A system for detecting infrared and visible light, comprising:
a monolithic 3D sensor for detecting infrared and visible light, comprising:
a semiconductor substrate having a device surface;
at least one visible light photodiode formed at the device surface;
at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode; and
a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation;
an infrared light source operable to emit infrared light detectable by the 3D photodiode; and
synchronization circuitry between the infrared light source and the 3D photodiode to synchronize detection of infrared light 3D photodiode with a pulse of the infrared light source.
16. The system of claim 15 , wherein the quantum efficiency enhanced infrared light region is a textured region located at the device surface.
17. The system of claim 15 , wherein the quantum efficiency enhanced infrared light region has surface structures formed using a pulsed laser with a pulse duration of from about 1 femtosecond to about 500 picoseconds.
18. The system of claim 17 , wherein the surface structures have an average height of from about 5 nm to about 500 μm.
19. The system of claim 15 , wherein the at least one visible light photodiode includes at least one red light-sensitive photodiode, at least one blue light-sensitive photodiode, at least one green light-sensitive photodiode, and at least two 3D photodiodes.
20. The system of claim 15 , wherein the 3D photodiode is operable to detect the infrared light from the infrared light source.
21. The system of claim 20 , further comprising an infrared narrow bandpass filter optically coupled to the 3D photodiode and positioned to filter electromagnetic radiation impinging on the 3D photodiode, wherein the infrared narrow bandpass filter has a pass band substantially matching the infrared light frequency.
22. The system of claim 15 , further comprising an infrared cut filter optically coupled to the at least one visible light diode and positioned to filter infrared electromagnetic radiation impinging on the at least one visible light photodiode.
23. The system of claim 15 , wherein the 3D photodiode further includes circuitry for capturing signals generated by the 3D photodiode in response to detection of a pulse of the infrared light from the infrared light source.
24. The system of claim 15 , further comprising circuitry for synchronizing light capture of the 3D photodiode with the infrared light generated by the infrared light source.