Catheter die and method of fabricating the same

1. A catheter die, comprising:

a device layer defining a cavity and including a piezoresistive pressure sensor operably disposed proximate to the cavity and an insulator having an opening and being disposed on an upper surface of the device layer such that a portion of the piezoresistive pressure sensor is exposed through the opening;

an insulation layer bonded to a lower surface of the device layer;

first and second bond pads, the first bond pad being electrically coupled to the portion of the piezoresistive pressure sensor via the opening and the second bond pad being disposed on the insulation layer.

2. The catheter die according to claim 1 , wherein the insulation layer is formed to define vent channels fluidly communicative with the cavity.

3. The catheter die according to claim 1 , wherein a thickness of the device layer is approximately 390 μm or less.

4. The catheter die according to claim 1 , wherein a thickness of the insulation layer is approximately 390 μm or less.

5. The catheter die according to claim 1 , wherein the device layer comprises silicon and the insulation layer comprises glass.

6. A catheter die, comprising:

a device layer defining a cavity and including a piezoresistive pressure sensor operably disposed proximate to the cavity and an insulator having an opening and being disposed on an upper surface of the device layer such that a portion of the piezoresistive pressure sensor is exposed through the opening;

an insulation layer bonded to the lower surface of the device layer;

a first bond pad electrically coupled to the portion of the piezoresistive pressure sensor via the opening;

a second bond pad disposed on the insulation layer and electrically coupled to the first bond pad via wiring; and

an external connector electrically coupled to the second bond pad at a distance from the wiring.

7. The catheter die according to claim 6 , wherein the insulation layer is formed to define vent channels fluidly communicative with the cavity.

8. The catheter die according to claim 6 , wherein a thickness of the device layer is approximately 390 μm or less.

9. The catheter die according to claim 6 , wherein a thickness of the insulation layer is approximately 390 μm or less.

10. The catheter die according to claim 6 , wherein the first device layer comprises at least one of an n-type and a p-type semi-conductor, the second device layer comprises an n-type semi-conductor and the insulation layer comprises glass.

11. The catheter die according to claim 6 , wherein the distance between the external connector and the wiring is 1 mm or more.

12. A method of fabricating a catheter die, comprising:

forming, in a device layer having upper and lower surfaces, a cavity recessed from at least the upper surface and a piezoresistive pressure sensor operably disposed proximate to the cavity;

disposing an insulator having an opening on the device layer to expose a portion of the piezoresistive pressure sensor;

bonding an insulation layer to the lower surface of the device layer; and

electrically coupling a first bond pad to the portion of the piezoresistive pressure sensor via the opening and disposing a second bond pad on the insulation layer.

13. The method according to claim 12 , wherein the forming of the cavity comprises at least one or more of wet and dry etching.

14. The method according to claim 12 , wherein the disposing of the insulator comprises at least one or more of depositing and growing a passivation layer.

15. The method according to claim 12 , wherein the forming of the piezoresistive pressure sensor comprises at least one or more of dopant diffusion and implantation.

16. The method according to claim 12 , further comprising defining the opening by at least one or more of wet and dry etching.

17. The method according to claim 12 , wherein the electrical coupling of the first bond pad to the portion of the piezoresistive pressure sensor comprises deposition processing.

18. The method according to claim 12 , wherein the disposing of the second bond pad on the insulation layer is conducted prior to the bonding of the insulation layer to the lower surface of the device layer and comprises:

etching a first through-hole in the insulator; and

etching a second through-hole in the device layer.

19. The method according to claim 12 , further comprising singulation processing.

20. The method according to claim 12 , further comprising defining in the insulation layer vent channels fluidly communicative with the cavity.