Nitride semiconductor light-emitting diode device
A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12 b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12 . A light reflecting depression A 1 to reflect light generated in the light emitting layer 12 b is formed in the bottom surface of the nitride semiconductor layer 12 . According to the nitride semiconductor light-emitting diode element 1 , since the light generated from the light emitting layer 12 b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A 1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased. Thus, light extraction efficiency is improved as compared with a conventional nitride semiconductor light-emitting diode element.
1. A nitride semiconductor light-emitting diode chip comprising
(a1) a GaN substrate,
(a2) a nitride semiconductor layer, formed on the GaN substrate, the nitride semiconductor layer having a laminated structure in which an n-type layer, a light emitting layer, and a p-type layer are laminated in this order from the GaN substrate,
(b) a light-transmissive electrode made of an oxide semiconductor formed on the nitride semiconductor layer, wherein a surface of the light-transmissive electrode has a surface roughness of less than 5 nm, in arithmetic means roughness (Ra) as an index,
(c) a reflection film formed on the surface of the light-transmissive electrode having the surface roughness of less than 5 nm, and
(d) a conductive substrate,
wherein the conductive substrate, the reflection film, the light-transmissive electrode, and the nitride semiconductor layer, and the GaN substrate in this order form a laminate structure, and
wherein a surface of the GaN substrate is rough such that the light emitted from the light emitting layer is extracted to the outside through the surface of the GaN substrate.
2. The nitride semiconductor light-emitting diode chip of claim 1 , wherein the oxide semiconductor is an indium tin oxide.
3. The nitride semiconductor light-emitting diode chip of claim 1 , wherein the reflection film is a metal reflection film.
4. The nitride semiconductor light-emitting diode chip of claim 3 , wherein the metal reflection film is made from a simple substance of Ag, Al, Rh, Pt, Ir, Pd, Ru, or Os, or an alloy composed mainly of any one of the above-mentioned metals.
5. The nitride semiconductor light-emitting diode chip of claim 3 , further comprising a light-transmissive dielectric film made from a material having a refractive index lower than that of the light-transmissive electrode and interposed between the light-transmissive electrode and the metal reflection film.
6. The nitride semiconductor light-emitting diode chip of claim 1 , wherein the reflection film is a dielectric multilayer film.
7. The nitride semiconductor light-emitting diode chip of claim 6 , wherein the reflection film further has a metal reflection layer laminated on the dielectric multilayer film.
8. The nitride semiconductor light-emitting diode chip of claim 1 , wherein the surface having a surface roughness of less than 5 nm, in arithmetic means roughness (Ra) as an index, is (1) obtained by removing a surface layer having concave-convex parts naturally present due to a polycrystalline structure of the oxide semiconductor and (2) flatter than a surface having the concave-convex parts before removal.